參數(shù)資料
型號: HY27US08121B-TPIS
廠商: HYNIX SEMICONDUCTOR INC
元件分類: PROM
英文描述: 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48
封裝: 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
文件頁數(shù): 12/40頁
文件大?。?/td> 360K
代理商: HY27US08121B-TPIS
Rev 0.5 / Jul. 2007
2
HY27US(08/16)12(1/2)B Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Document Title
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory
Revision History
Revision
No.
History
Draft Date
Remark
0.0
Initial Draft.
Oct. 19. 2006
Preliminary
0.1
1) Correct Figure 14 & 15
Mar. 07. 2007
0.2
1) Add AC Characteristics
- tRB : Last RE High to busy (at sequential read)
- tCRY : CE High to Ready (in case of interception by CE at read)
- tCEH : CE High Hold Time (at the last serial read)
Mar. 26. 2007
0.3
1) Add sequential row read feature and figure
2) Modify Block Replacement
Apr. 27. 2007
0.4
1) Add x16 Characteristics
2) Modify read2 operation (sequential row read)
3) Add AC Characteristics
- tOH : RE or CE High to Output Hold
May. 29. 2007
0.5
1) Correct Read ID Table 16
2) Correct System Interface Using CE don’t care operation
3) Correct Command Set Table 5
Jul. 20. 2007
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