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| 型號： | HY27US08121B-TPIS |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48 |
| 封裝： | 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 |
| 文件頁數(shù)： | 13/40頁 |
| 文件大?。?/td> | 360K |
| 代理商： | HY27US08121B-TPIS |
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Rev 0.5 / Jul. 2007
20
HY27US(08/16)12(1/2)B Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Parameter
Symbol
3.3Volt
Unit
Min
Max
CLE Setup time
tCLS
15
ns
CLE Hold time
tCLH
5ns
CE setup time
tCS
20
ns
CE hold time
tCH
5ns
WE pulse width
tWP
15
ns
ALE setup time
tALS
15
ns
ALE hold time
tALH
5ns
Data setup time
tDS
15
ns
Data hold time
tDH
5ns
Write Cycle time
tWC
30
ns
WE High hold time
tWH
10
ns
Data Transfer from Cell to register
tR
12
us
ALE to RE Delay
tAR
10
ns
CLE to RE Delay
tCLR
10
ns
Ready to RE Low
tRR
20
ns
RE Pulse Width
tRP
15
ns
WE High to Busy
tWB
100
ns
Read Cycle Time
tRC
30
ns
RE Access Time
tREA
18
ns
RE High to Output High Z
tRHZ
50
ns
CE High to Output High Z
tCHZ
50
ns
RE or CE high to Output hold
tOH
10
ns
RE High Hold Time
tREH
10
ns
Output High Z to RE low
tIR
0ns
CE Access Time
tCEA
25
ns
WE High to RE low
tWHR
60
ns
Last RE High to busy (at sequential read)
tRB
100
ns
CE High to Ready (in case of interception by CE at read)
tCRY
60+tr(R/B#)(4)
ns
CE High Hold Time (at the last serial read)(3)
tCEH
100
ns
Device Resetting Time (Read / Program / Erase)
tRST
5/10/500(1,2)
us
Write Protection time
tWW(5)
100
ns
Table 13: AC Timing Characteristics
NOTE:
1. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5us
2. The time to Ready depends on the value of the pull-up resistor tied R/B pin.ting time.
3. To break the sequential read cycle, CE must be held for longer time than tCEH.
4. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
5. Program / Erase Enable Operation : WP high to WE High.
Program / Erase Disable Operation : WP Low to WE High.
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PDF描述 |
|---|---|
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| HY27US081G1MSES | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY27US081G1MTCS | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY27US081G1MTPMP | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY5116100BJ-70 | 16M X 1 FAST PAGE DRAM, 70 ns, PDSO24 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27US08121M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27US08122B | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27US081G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
| HY27US08281A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
| HY27US08282A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
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