參數(shù)資料
型號: HY27US08121B-TPIS
廠商: HYNIX SEMICONDUCTOR INC
元件分類: PROM
英文描述: 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48
封裝: 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
文件頁數(shù): 2/40頁
文件大?。?/td> 360K
代理商: HY27US08121B-TPIS
Rev 0.5 / Jul. 2007
10
HY27US(08/16)12(1/2)B Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
CLE
ALE
CE
WE
RE
WP
MODE
H
L
Rising
H
X
Read Mode
Command Input
L
H
L
Rising
H
X
Address Input(4 cycles)
H
L
Rising
H
Write Mode
Command Input
L
H
L
Rising
H
Address Input(4 cycles)
LLL
Rising
H
Data Input
LL
L(1)
H
Falling
X
Sequential Read and Data Output
L
H
X
During Read (Busy)
XXXX
XH
During Program (Busy)
XXXX
XH
During Erase (Busy)
XXXX
X
L
Write Protect
XX
H
X
0V/Vcc
Stand By
Table 6: Mode Selection
NOTE:
1. With the CE high during latency time does not stop the read operation
相關PDF資料
PDF描述
HY27US08121B-FIB 64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63
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