參數(shù)資料
型號(hào)： HY27SA081G1M-VPEB
廠商： HYNIX SEMICONDUCTOR INC
元件分類： PROM
英文描述： 128M X 8 FLASH 1.8V PROM, 12000 ns, PDSO48
封裝： 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, WSOP1-48
文件頁(yè)數(shù)： 29/45頁(yè)
文件大?。?/td> 675K
代理商： HY27SA081G1M-VPEB
Rev 0.3 / May. 2004
36
Preliminary
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Note: Refer to table(To see Page 21) for the values of the manufacture and device codes.
Figure 26. Read Electronic Signature AC Waveform
Figure 27. Read Read A/ Read B Operation AC Waveform
I/O
RE
CE
Man.
code
90h
Device
code
Don't
Care
Don't
Care
00h
WE
ALE
CLE
Read Electronic
Signature Command
1st Cycle
Address
Manufacturer and
Device Code
Reserved For
Future Use
tALLRL1
tRLQV
(Read ES Access time)
I/O
RE
CE
WE
ALE
CLE
RB
Busy
Data Output
from Address N to Last Byte or Word in Page
Data
N
Add.N
cycle 1
Add.N
cycle 2
Add.N
cycle 3
Add.N
cycle 4
00h or
01h
Data
N+1
Data
N+2
Data
Last
Address N Input
Command
Code
tEHEL
tWHWL
tWHBL
tWHBH
tALLRL2
tRLRL
(Read Cycle time)
tRHQZ
tRHBL
tRLRH
tBLBH1
tEHQZ
tEHBH
相關(guān)PDF資料
PDF描述
HY27UA081G1M-TIB 128M X 8 FLASH 3.3V PROM, 12000 ns, PDSO48
HY27US08121B-TPIS 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48
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HY27US081G1MTCS 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48
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