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參數(shù)資料
| 型號： | HY27SA081G1M-VPEB |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 12000 ns, PDSO48 |
| 封裝： | 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, WSOP1-48 |
| 文件頁數(shù)： | 20/45頁 |
| 文件大小： | 675K |
| 代理商： | HY27SA081G1M-VPEB |
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Rev 0.3 / May. 2004
28
Preliminary
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Table 9: Program, Erase Time and Program Erase Endurance Cycles
MAXIMUM RATING
Stressing the device above the ratings listed in Table 10, Absolute Maximum Ratings, may cause permanent damage to
the device. These are stress ratings only and operation of the device at these or any other conditions above those indi-
cated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability.
Table 10: Absolution Maximum Rating
Note: (1). Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins. Maximum voltage
may overshoot to VCC + 2V for less than 20ns during transitions on I/O pins.
DC AND AC PARAMETERS
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device.
The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Mea-
surement Conditions summarized in Table 11, Operating and AC Measurement Conditions. Designers should check that
the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters.
Parameters
NAND Flash
Unit
Min
Typ
Max
Page Program Time
200
500
us
Block Erase Time
2
3
ms
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
10
years
Symbol
Parameter
NAND Flash
Unit
Min
Max
TBIAS
Temperature Under Bias
-50
125
oC
TSTG
Storage Temperature
-65
150
oC
VIO(1)
Input or Output Voltage
1.8V devices
-0.6
2.7
V
3.3 V devices
-0.6
4.6
V
VCC
Supply Voltage
1.8V devices
-0.6
2.7
V
3.3 V devices
-0.6
4.6
V
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| HY27US081G1MSES | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
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