| 型號 | 廠商 | 描述 |
| bfr15a 2 3 4 |
TRANSISTOR | BJT | NPN | 30MA I(C) | TO-72 | |
| bfr17 2 3 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 | |
| bfr53 2 3 4 5 6 7 8 9 10 11 12 |
NXP SEMICONDUCTORS | NPN 2 GHz wideband transistor |
| bfr54 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
NXP SEMICONDUCTORS | NPN 9 GHz wideband transistor |
| bfs20ta |
TRANSISTOR UHF BIPOLAR BREITBAND | |
| bfs20 |
ZETEX PLC | NPN SILICON PLANAR VHF TRANSISTOR |
| bfs20 |
DIOTEC SEMICONDUCTOR AG | Surface mount Si-Epitaxial PlanarTransistors |
| bfs21 2 3 4 5 |
TRANSISTOR | JFET | N-CHANNEL | DUAL | 30V V(BR)DSS | 1MA I(DSS) | TO-52 | |
| bfs360l6 2 3 |
?NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz ? | |
| bfs386l6 2 3 4 |
?NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz? | |
| bfs55a 2 3 4 |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode | |
| bfs62 2 3 4 |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode | |
| bft49 |
NPN | |
| bft57dcsm |
TRANSISTOR | BJT | PAIR | NPN | 160V V(BR)CEO | 200MA I(C) | LLCC | |
| bft59dcsm |
TRANSISTOR | BJT | PAIR | NPN | 300V V(BR)CEO | 200MA I(C) | LLCC | |
| bft59 |
SEMELAB LTD | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
| bft58csm |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 200MA I(C) | LLCC | |
| bft58dcsm |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode | |
| bft61 |
PNP | |
| bft62 |
PNP | |
| bfx87 |
CENTRAL SEMICONDUCTOR CORP | Small Signal Transistors |
| bfx87 |
SEMELAB LTD | Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
| bfx34smd05 |
NPN | |
| bfx34 |
NXP SEMICONDUCTORS | NPN switching transistor |
| bfx34 |
意法半導(dǎo)體 | SILICON NPN TRANSISTOR |
| bfx34 |
CENTRAL SEMICONDUCTOR CORP | Small Signal Transistors |
| bfx48dcsm |
TRANSISTOR | BJT | PAIR | PNP | 30V V(BR)CEO | 100MA I(C) | LLCC | |
| bfx48 |
SEMELAB LTD | PNP SILICON EPITAXIAL TRANSISTOR |
| bfx59 2 3 |
TRANSISTOR | BJT | NPN | 100MA I(C) | TO-72 | |
| bfx59f 2 3 |
TRANSISTOR | BJT | NPN | 100MA I(C) | TO-72 | |
| bfx60 2 3 |
TRANSISTOR | BJT | NPN | 25MA I(C) | TO-72 | |
| bfx81dcsm |
TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 200MA I(C) | LLCC | |
| bfy50 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | NPN medium power transistors |
| bfy51 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | NPN medium power transistors |
| bfy52 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| bfy50l 2 3 4 5 6 7 8 |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode | |
| bfy50 2 3 4 5 6 7 8 |
意法半導(dǎo)體 | MEDIUM POWER AMPLIFIER |
| bfy51 2 3 4 5 6 7 8 |
意法半導(dǎo)體 | MEDIUM POWER AMPLIFIER |
| bfy50 2 3 4 5 6 7 8 |
CENTRAL SEMICONDUCTOR CORP | Small Signal Transistors |
| bfy51 2 3 4 5 6 7 8 |
CENTRAL SEMICONDUCTOR CORP | Small Signal Transistors |
| bfy52 2 3 4 5 6 7 8 |
CENTRAL SEMICONDUCTOR CORP | Small Signal Transistors |
| bfy50 2 3 4 5 6 7 8 |
SEMELAB LTD | MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR |
| bfy90csm |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode | |
| bfy90dcsm |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode | |
| bfy90 |
意法半導(dǎo)體 | WIDE BAND VHF/UHF AMPLIFIER |
| bfy90 |
CENTRAL SEMICONDUCTOR CORP | Small Signal NPN Transistors / Dual Transistors |
| bg2011sm-b 2 3 4 5 6 7 8 9 10 11 12 13 |
Microwave/Millimeter Wave Amplifier | |
| bg4egx(pkof10) |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode | |
| bg4fjx-packof10 |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode | |
| bg4hkx-packof10 |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |