參數資料
型號: BFY50
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR
中文描述: 1000 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
封裝: METAL CAN, TO-39, 3 PIN
文件頁數: 4/8頁
文件大小: 55K
代理商: BFY50
1997 Apr 22
4
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
BFY50
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 100
°
C
I
E
= 0; V
CB
= 80 V
I
E
= 0; V
CB
= 80 V; T
j
= 100
°
C
50
2.5
500
30
nA
μ
A
nA
μ
A
I
CBO
collector cut-off current
BFY51
I
E
= 0; V
CB
= 40 V
I
E
= 0; V
CB
= 40 V; T
j
= 100
°
C
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 100
°
C
50
2.5
500
30
nA
μ
A
nA
μ
A
I
CBO
collector cut-off current
BFY52
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 100
°
C
I
E
= 0; V
CB
= 40 V
I
E
= 0; V
CB
= 40 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 0; V
EB
= 5 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 6 V
50
2.5
500
30
50
2.5
500
nA
μ
A
nA
μ
A
nA
μ
A
nA
I
EBO
emitter cut-off current
h
FE
DC current gain
BFY50
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
20
30
20
15
h
FE
DC current gain
BFY51
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
30
40
25
15
h
FE
DC current gain
BFY52
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
30
60
30
15
相關PDF資料
PDF描述
BFY90CSM Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
BFY90DCSM Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
BFY90 WIDE BAND VHF/UHF AMPLIFIER
BFY90 Small Signal NPN Transistors / Dual Transistors
BG2011SM-B Microwave/Millimeter Wave Amplifier
相關代理商/技術參數
參數描述
BFY50 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5
BFY50_02 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR
BFY50L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN
BFY51 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BFY51 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5