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參數(shù)資料
| 型號： | BFY50 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN medium power transistors |
| 中文描述： | 1000 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 55K |
| 代理商： | BFY50 |
1997 Apr 22
4
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
BFY50
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 100
°
C
I
E
= 0; V
CB
= 80 V
I
E
= 0; V
CB
= 80 V; T
j
= 100
°
C
50
2.5
500
30
nA
μ
A
nA
μ
A
I
CBO
collector cut-off current
BFY51
I
E
= 0; V
CB
= 40 V
I
E
= 0; V
CB
= 40 V; T
j
= 100
°
C
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 100
°
C
50
2.5
500
30
nA
μ
A
nA
μ
A
I
CBO
collector cut-off current
BFY52
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 100
°
C
I
E
= 0; V
CB
= 40 V
I
E
= 0; V
CB
= 40 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 0; V
EB
= 5 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 6 V
50
2.5
500
30
50
2.5
500
nA
μ
A
nA
μ
A
nA
μ
A
nA
I
EBO
emitter cut-off current
h
FE
DC current gain
BFY50
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
20
30
20
15
h
FE
DC current gain
BFY51
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
30
40
25
15
h
FE
DC current gain
BFY52
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
30
60
30
15
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFY51 | NPN medium power transistors |
| BFY52 | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| BFY50L | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| BFY50 | MEDIUM POWER AMPLIFIER |
| BFY51 | MEDIUM POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFY50 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5 |
| BFY50_02 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR |
| BFY50L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| BFY51 | 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BFY51 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5 |
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