參數(shù)資料
型號: BFY52
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
中文描述: 1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
文件頁數(shù): 5/8頁
文件大小: 55K
代理商: BFY52
1997 Apr 22
5
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
V
CEsat
collector-emitter saturation voltage
BFY50
I
C
= 10 mA; I
B
= 1 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
200
200
700
1
mV
mV
mV
V
V
CEsat
collector-emitter saturation voltage
BFY51; BFY52
I
C
= 10 mA; I
B
= 1 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V;
f = 100 MHz; T
amb
= 25
°
C
7
200
350
1
1.6
1.2
1.3
1.5
2
12
mV
mV
V
V
V
V
V
V
pF
V
BEsat
base-emitter saturation voltage
C
c
f
T
collector capacitance
transition frequency
BFY50
BFY51; BFY52
60
50
140
MHz
MHz
Switching times (between 10% and 90% levels)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
15 mA
55
15
40
360
300
60
ns
ns
ns
ns
ns
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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