參數(shù)資料
型號: BFY50
廠商: 意法半導(dǎo)體
英文描述: MEDIUM POWER AMPLIFIER
中文描述: 中功率功率放大器
文件頁數(shù): 2/8頁
文件大?。?/td> 55K
代理商: BFY50
1997 Apr 22
2
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
FEATURES
High current (max. 1 A)
Low voltage (max. 35 V).
APPLICATIONS
General purpose industrial applications.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PINNING
PIN
DESCRIPTION
1
2
3
emitter
base
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
handbook, halfpage
3
1
2
MAM317
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
BFY50
BFY51
BFY52
collector-emitter voltage
BFY50
BFY51
BFY52
peak collector current
total power dissipation
open emitter
80
60
40
V
V
V
V
CEO
open base
35
30
20
1
800
2.86
V
V
V
A
mW
W
I
CM
P
tot
T
amb
25
°
C
T
case
100
°
C
I
C
= 150 mA; V
CE
= 10 V
h
FE
DC current gain
BFY50
BFY51
BFY52
transition frequency
BFY50
BFY51; BFY52
30
40
60
112
123
142
f
T
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
60
50
MHz
MHz
相關(guān)PDF資料
PDF描述
BFY51 MEDIUM POWER AMPLIFIER
BFY50 Small Signal Transistors
BFY51 Small Signal Transistors
BFY52 Small Signal Transistors
BFY50 MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR
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