- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄1900 > ADUC7021BCPZ62-RL7 (Analog Devices Inc)IC MCU 12BIT 1MSPS UART 40-LFCSP PDF資料下載
參數(shù)資料
| 型號： | ADUC7021BCPZ62-RL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 39/92頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC MCU 12BIT 1MSPS UART 40-LFCSP |
| 標(biāo)準(zhǔn)包裝： | 750 |
| 系列： | MicroConverter® ADuC7xxx |
| 核心處理器： | ARM7 |
| 芯體尺寸： | 16/32-位 |
| 速度： | 44MHz |
| 連通性： | EBI/EMI，I²C，SPI，UART/USART |
| 外圍設(shè)備： | PLA，PWM，PSM，溫度傳感器，WDT |
| 輸入/輸出數(shù)： | 13 |
| 程序存儲器容量： | 64KB（32K x 16） |
| 程序存儲器類型： | 閃存 |
| RAM 容量： | 2K x 32 |
| 電壓 - 電源 (Vcc/Vdd)： | 2.7 V ~ 3.6 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 8x12b，D/A 2x12b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 125°C |
| 封裝/外殼： | 40-VFQFN 裸露焊盤，CSP |
| 包裝： | 帶卷 (TR) |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁當(dāng)前第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁
ADuC7019/20/21/22/24/25/26/27/28
Rev. B | Page 44 of 92
NONVOLATILE FLASH/EE MEMORY
The ADuC7019/20/21/22/24/25/26/27/28 incorporate Flash/EE
memory technology on-chip to provide the user with nonvolatile,
in-circuit reprogrammable memory space.
Like EEPROM, flash memory can be programmed in-system
at a byte level, although it must first be erased. The erase is
performed in page blocks. As a result, flash memory is often
and more correctly referred to as Flash/EE memory.
Overall, Flash/EE memory represents a step closer to the
ideal memory device that includes nonvolatility, in-circuit
programmability, high density, and low cost. Incorporated in
the ADuC7019/20/21/22/24/25/26/27/28, Flash/EE memory
technology allows the user to update program code space in-
circuit, without the need to replace one-time programmable
(OTP) devices at remote operating nodes.
Each part contains a 64 kB array of Flash/EE memory. The
lower 62 kB is available to the user and the upper 2 kB contain
permanently embedded firmware, allowing in-circuit serial
download. These 2 kB of embedded firmware also contain a
power-on configuration routine that downloads factory-
calibrated coefficients to the various calibrated peripherals
(such as ADC, temperature sensor, and band gap references).
This 2 kB embedded firmware is hidden from user code.
Flash/EE Memory Reliability
The Flash/EE memory arrays on the parts are fully qualified for
two key Flash/EE memory characteristics: Flash/EE memory
cycling endurance and Flash/EE memory data retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. A single
endurance cycle is composed of four independent, sequential
events, defined as:
1.
Initial page erase sequence.
2.
Read/verify sequence (single Flash/EE).
3.
Byte program sequence memory.
4.
Second read/verify sequence (endurance cycle).
In reliability qualification, every half word (16-bit wide)
location of the three pages (top, middle, and bottom) in the
Flash/EE memory is cycled 10,000 times from 0x0000 to
0xFFFF. As indicated in Table 1, the Flash/EE memory
endurance qualification is carried out in accordance with
JEDEC Retention Lifetime Specification A117 over the
industrial temperature range of 40° to +125°C. The results
allow the specification of a minimum endurance figure over a
supply temperature of 10,000 cycles.
Retention quantifies the ability of the Flash/EE memory to
retain its programmed data over time. Again, the parts are
qualified in accordance with the formal JEDEC Retention
Lifetime Specification (A117) at a specific junction temperature
(TJ = 85°C). As part of this qualification procedure, the
Flash/EE memory is cycled to its specified endurance limit,
described previously, before data retention is characterized.
This means that the Flash/EE memory is guaranteed to retain
its data for its fully specified retention lifetime every time the
Flash/EE memory is reprogrammed. In addition, note that
retention lifetime, based on an activation energy of 0.6 eV,
150
300
450
600
30
40
55
70
85
100
125
135
150
RE
T
E
NT
IO
N
(
Y
ea
rs
)
0
04
95
5-
08
5
JUNCTION TEMPERATURE (°C)
Figure 50. Flash/EE Memory Data Retention
PROGRAMMING
The 62 kB of Flash/EE memory can be programmed in-circuit,
using the serial download mode or the provided JTAG mode.
Serial Downloading (In-Circuit Programming)
The ADuC7019/20/21/22/24/25/26/27/28 facilitate code
download via the standard UART serial port or via the I2C port.
The parts enter serial download mode after a reset or power
cycle if the BM pin is pulled low through an external 1 kΩ
resistor. Once in serial download mode, the user can download
code to the full 62 kB of Flash/EE memory while the device is
in-circuit in its target application hardware. An executable PC
serial download is provided as part of the development system
for serial downloading via the UART. The AN-806 Application
Note describes the protocol for serial downloading via the
UART and I2C.
JTAG Access
The JTAG protocol uses the on-chip JTAG interface to facilitate
code download and debug.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ADUC7023BCPZ62I-R7 | IC MCU 12BIT 62KB FLASH 32LFCSP |
| ADUC7024BCPZ62 | IC MCU FLSH 62K ANLG I/O 64LFCSP |
| ADUC7032BSTZ-88 | IC MCU 96K FLASH DUAL 48LQFP |
| ADUC7032BSTZ-8V-RL | IC BATTERY SENSOR PREC 48-LQFP |
| ADUC7034BCPZ | IC MCU FLASH 32K ANLG IO 48LFCSP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADUC7022 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Precision Analog Microcontroller 12-bit Analog I/O, ARM7TDMI MCU |
| ADUC7022ACP32 | 制造商:Analog Devices 功能描述:FLASH ARM7+10-CH,12-B ADC IC - Trays |
| ADUC7022ACPZ32 | 制造商:Analog Devices 功能描述:MCU 32BIT RISC 32KB FLASH 3.3V 40LFCSP EP - Trays |
| ADUC7022BCP32 | 制造商:Analog Devices 功能描述:FLASH ARM7+10-CH,12-B ADC IC - Trays |
| ADUC7022BCP62 | 制造商:Analog Devices 功能描述:FLASH ARM7+10-CH,12-B ADC IC - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。