參數資料
型號: 28F640J5
英文描述: Dual-Slot, PCMCIA Analog Power Controller
中文描述: 28F640J5 -英特爾StrataFlash內存技術,32和64兆比特
文件頁數: 42/53頁
文件大?。?/td> 306K
代理商: 28F640J5
INTEL
StrataFlash MEMORY TECHNOLOGY, 32 AND 64 MBIT
E
6.0 ELECTRICAL SPECIFICATIONS
42
PRELIMINARY
6.1
Absolute Maximum Ratings*
Temperature under Bias
Expanded..............................
–20 °C to +70 °C
Storage Temperature................. –65 °C to +125 °C
Voltage On Any Pin (except RP#)
............................................ –2.0 V to +7.0 V
(1)
RP# Voltage with Respect to
GND during Lock-Bit
Configuration Operations–2.0 V to +14.0 V
(1,2,3)
Output Short Circuit Current.....................100 mA
(4)
NOTICE: This datasheet contains preliminary information
on new products in production. The specifications are
subject to change without notice. Verify with your local
Intel Sales office that you have the latest datasheet before
finalizing a design
.
*WARNING: Stressing the device beyond the
“Absolute
Maximum Ratings” may cause permanent damage. These
are stress ratings only. Operation beyond the “Operating
Conditions” is not recommended and extended exposure
beyond the “Operating Conditions” may affect device
reliability.
NOTES:
1. All specified voltages are with respect to GND. Minimum DC voltage is
–0.5 V on input/output pins and –0.2 V on V
CC
and
V
PEN
pins. During transitions, this level may undershoot to –2.0 V for periods <20 ns. Maximum DC voltage on input/output
pins, V
CC
, and V
PEN
is V
CC
+0.5 V which, during transitions, may overshoot to V
CC
+2.0 V for periods <20 ns.
2. Maximum DC voltage on RP# may overshoot to +14.0 V for periods <20 ns.
3. RP# voltage is normally at V
IL
or V
IH
. Connection to supply of V
HH
is allowed for a maximum cumulative period of 80 hours.
4. Output shorted for no more than one second. No more than one output shorted at a time.
6.2
Operating Conditions
Temperature and V
CC
Operating Conditions
Symbol
Parameter
Notes
Min
Max
Unit
Test Condition
T
A
Operating Temperature
–20
+70
°C
Ambient Temperature
V
CC
V
CC1
Supply Voltage (5 V ± 10%)
4.50
5.50
V
V
CCQ1
V
CCQ1
Supply Voltage (5 V ± 10%)
4.50
5.50
V
V
CCQ2
V
CCQ2
Supply Voltage (2. 7V
3.6 V)
2.70
3.60
V
6.3
T
A
= +25°C, f = 1 MHz
Capacitance
(1)
Symbol
Parameter
Typ
Max
Unit
Condition
C
IN
C
OUT
NOTE:
1.
Input Capacitance
6
8
pF
V
IN
= 0.0 V
V
OUT
= 0.0 V
Output Capacitance
8
12
pF
Sampled, not 100% tested.
相關PDF資料
PDF描述
28LV010RT2DB20 3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010RPDB20 3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010RPDB25 3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010RPDE20 3.3V 1 Megabit (128K x 8-Bit) EEPROM
相關代理商/技術參數
參數描述
28F640L18 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
28F640L30 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30)
28F640P3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
28F640W30 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F650 制造商:Cinch Connectors 功能描述:1 Lug Terminal Strip