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| 型號(hào)： | V29C51400B |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | High Speed 4 MEGA Bit 5 Volt CMOS Flash Memory(高速4M位5V CMOS閃速存儲(chǔ)器) |
| 中文描述： | 高速4兆的5伏的CMOS閃存（高速分位5V的CMOS閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 11/16頁(yè) |
| 文件大小： | 76K |
| 代理商： | V29C51400B |
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MOSEL V ITELIC
V29C51400T/V29C51400B
11
V29C51400T/V29C51400B Rev. 1.0 February 1999
Table 2. Command Codes
NOTES:
1.
2.
3.
4.
5.
RA: Read Address
RD: Read Data
PA: The address of the memory location to be programmed.
PD: The data at the byte address to be programmed.
SA(5): Sector Address
Command
Sequence
Reset/Read
Reset/Read
Bus
Write
Cycles
Req’d
1
3
First Bus
Program Cycle
Second Bus
Program Cycle
Third Bus
Program Cycle
Fourth Bus
Program Cycle
Fifth Bus
Program Cycle
Six Bus
Program Cycle
Address
XXXXH
5555H
AAAAH
5555H
Data
F0H
AAH
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
Word
Byte
Word
2AAAH
5555H
2AAAH
55H
5555H
AAAAH
5555H
F0H
RA
RD
Autoselect
Mode
3
AAH
55H
90H
01H
13H, B3H
(B Device
ID)
Byte
AAAAH
5555H
AAAAH
13H, B3H
(B Device
ID)
Word/Byte
00H
40H
PD(4)
Program
Word
Byte
Word
Byte
Word
Byte
4
5555H
AAAAH
5555H
AAAAH
5555H
AAAAH
AAH
2AAAH
5555H
2AAAH
5555H
2AAAH
5555H
55H
5555H
AAAAH
5555H
AAAAH
5555H
AAAAH
A0H
PA
Chip Erase
0
AAH
55H
80H
5555H
AAAAH
5555H
AAAAH
AAH
2AAAH
5555H
2AAAH
5555H
55H
5555H
AAAAH
SA
10H
Sector Erase
6
AAH
55H
80H
AAH
55H
30H
Chip Erase Cycle
The V29C51400T/V29C51400B features a chip-
erase operation. The chip erase operation is
initiated by using a specific six-bus-cycle
sequence: two unlock program cycles, a setup
command, two additional unlock program cycles,
and the chip erase command (see Table 2).
The automatic erase begins on the rising edge of
the last WE or CE pulse in the command sequence
and terminates when the data on DQ7 is “1”.
Program Cycle Status Detection
There are two methods for determining the state
of the V29C51400T/V29C51400B during a
program (erase/write) cycle: DATA Polling (I/O
7
)
and Toggle Bit (I/O
6
).
DATA Polling (I/O
7
)
The V29C51400T/V29C51400B features DATA
polling to indicate the end of a program cycle.
When the device is in the program cycle, any
attempt to read the device will received the
complement of the loaded data on I/O
7
. Once the
program cycle is completed, I/O
7
will show true
data, and the device is then ready for the next
cycle.
Toggle Bit (I/O
6
)
The V29C51400T/V29C51400B also features
another method for determining the end of a
program cycle. When the device is in the program
cycle, any attempt to read the device will result in
l/O
6
toggling between 1 and 0. Once the program is
completed, the toggling will stop. The device is then
ready for the next operation. Examining the toggle
bit may begin at any time during a program cycle.
Boot Block Protection Enabling/Disabling
The V29C51400T/V29C51400B features
hardware Boot Block Protection. The boot block
sector protection is enabled when high voltage
(12.5V) is applied to OE and A9 pins with CE pin
LOW and WE pin LOW. The sector protection is
disabled when high voltage is applied to OE, CE
and A9 pins with WE pin LOW. Other pins can be
HIGH or LOW. This is shown in table 1.
Autoselect Mode
The V29C51400T/V29C51400B features an
Autoselect mode to identify boot block locking
status, device ID and manufacturer ID.
Entering Autoselect mode is accomplished by
applying a high voltage (VH) to the A9 Pin, or
through a sequence of commands (as shown in
table 2). Device will exit this mode once high
voltage on A9 is removed or another command is
loaded into the device.
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