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參數(shù)資料
| 型號： | V29C51400B |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | High Speed 4 MEGA Bit 5 Volt CMOS Flash Memory(高速4M位5V CMOS閃速存儲器) |
| 中文描述： | 高速4兆的5伏的CMOS閃存（高速分位5V的CMOS閃速存儲器） |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 76K |
| 代理商： | V29C51400B |
MOSEL V ITELIC
1
V29C51400T/V29C51400B
4 MEGABIT
(262,144 x 16 BIT/524,288 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
PRELIMINARY
V29C51400T/V29C51400B Rev. 1.0 February 1999
Features
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256K x 16-bit or 512K x 8-bit Organization
Address Access Time: 55, 70, 90, 120 ns
Single 5V
±
10% Power Supply
Sector Erase Mode Operation
16KB Boot Block (lockable)
1K bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 20
Minimum 10,000 Erase-Program Cycles
Low power dissipation
– Active Read Current: 19mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100
Hardware Data Protection
Low V
CC
Program Inhibit Below 3.5V
Self-timed write/erase operations with end-of-cy-
cle detection
– DATA Polling
– Toggle Bit
CMOS and TTL Interface
Available in two versions
– V29C51400T (Top Boot Block)
– V29C51400B (Bottom Boot Block)
Packages:
– 48-pin TSOP-I
m
s (Max)
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m
A (Max)
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Description
The V29C51400T/V29C51400B is a high speed
262,144 x 16 bit or 524,288 x 8-bit CMOS flash
memory. Writing or erasing the device is done with
a single 5 Volt power supply. The device has
separate chip enable CE, write enable WE, and
output enable OE controls to eliminate bus
contention.
The V29C51400T/V29C51400B offers a combi-
nation of: Boot Block with Sector Erase/Write
Mode. The end of write/erase cycle is detected by
DATA Polling of I/O
7
or by the Toggle Bit I/O
The V29C51400T/V29C51400B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector located either at the
top (V29C51400T) or the bottom (V29C51400B).
All inputs and outputs are CMOS and TTL
compatible.
The V29C51400T/V29C51400B is ideal for
applications that require updatable code and data
storage.
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Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Temperature
Mark
T
J
70
90
120
0
°
C to 70
°
C
Blank
–40
°
C to +85
°
C
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相關代理商/技術參數(shù) |
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|---|---|
| V29C51400T | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY |
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| V29GL01GP11FFIR20 | 功能描述:IC MEMORY 1GB FLASH SMD 制造商:cypress semiconductor corp 系列:GL-P 包裝:* 零件狀態(tài):Last Time Buy 格式 - 存儲器:閃存 存儲器類型:FLASH - NOR 存儲容量:1G（128M x 8） 速度:110ns 接口:并聯(lián) 電壓 - 電源:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:* 供應商器件封裝:* 標準包裝:1 |
| V29GL01GP11TAIR20 | 功能描述:IC MEMORY 1GB FLASH SMD 制造商:cypress semiconductor corp 系列:GL-P 包裝:* 零件狀態(tài):Last Time Buy 格式 - 存儲器:閃存 存儲器類型:FLASH - NOR 存儲容量:1G（128M x 8） 速度:110ns 接口:并聯(lián) 電壓 - 電源:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:* 供應商器件封裝:* 標準包裝:1 |
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