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參數(shù)資料
| 型號(hào)： | V29LC51002 |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY |
| 中文描述： | 2兆位262,144 × 8位5伏的CMOS閃存 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | V29LC51002 |
MOSEL V ITELIC
1
V29LC51002
2 MEGABIT (262,144 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
PRELIMINARY
V29LC51002 Rev. 0.5 October 2000
Features
I
I
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256Kx8-bit Organization
Address Access Time: 90 ns
Single 5V
±
10% Power Supply
Sector Erase Mode Operation
512 bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 30
Minimum 1,000 Erase-Program Cycles
Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100
Low V
CC
Program Inhibit Below 3.5V
CMOS and TTL Interface
Packages:
– 32-pin Plastic DIP
– 32-pin PLCC
μ
s (Max)
I
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μ
A (Max)
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Description
The V29LC51002 is a high speed 262,144 x 8 bit
CMOS flash memory. Writing or erasing the device
is done with a single 5 Volt power supply. The
device has separate chip enable CE, write enable
WE, and output enable OE controls to eliminate
bus contention.
The V29LC51002 features a sector erase
operation which allows each sector to be erased
and reprogrammed without affecting data stored in
other sectors. The device also supports full chip
erase.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Temperature
Mark
P
J
90
0
°
C to 70
°
C
Blank
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