參數(shù)資料
型號: V29LC51002
廠商: Mosel Vitelic, Corp.
英文描述: 2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY
中文描述: 2兆位262,144 × 8位5伏的CMOS閃存
文件頁數(shù): 5/12頁
文件大小: 52K
代理商: V29LC51002
MOSEL V ITELIC
V29LC51002
5
V29LC51002 Rev. 0.5 October 2000
AC Electrical Characteristics
(over all temperature ranges)
Read Cycle
Program (Erase/Program) Cycle
Parameter
Name
Parameter
-90
Unit
Min.
Max.
t
RC
Read Cycle Time
90
ns
t
AA
Address Access Time
90
ns
t
ACS
Chip Enable Access Time
90
ns
t
OE
Output Enable Access Time
45
ns
t
CLZ
CE Low to Output Active
0
ns
t
OLZ
OE Low to Output Active
0
ns
t
DF
OE or CE High to Output in High Z
0
40
ns
t
OH
Output Hold from Address Change
0
ns
Parameter
Name
Parameter
-90
Unit
Min.
Typ.
Max.
t
WC
Write Cycle Time
90
ns
t
AS
Address Setup Time
0
ns
t
AH
Address Hold Time
45
ns
t
CS
CE Setup Time
0
ns
t
CH
CE Hold Time
0
ns
t
OES
OE Setup Time
0
ns
t
OEH
OE High Hold Time
0
ns
t
WP
WE Pulse Width
45
ns
t
WPH
WE Pulse Width High
30
ns
t
DS
Data Setup Time
30
ns
t
DH
Data Hold Time
0
ns
t
WHWH1
Programming Cycle
30
μ
s
t
WHWH2
Sector Erase Cycle
10
ms
t
WHWH3
Chip Erase Cycle
3
sec
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