參數(shù)資料
型號(hào): S29NS512PABBJW003
廠商: SPANSION LLC
元件分類(lèi): DRAM
英文描述: MirrorBit Flash Family
中文描述: 32M X 16 FLASH 1.8V PROM, 80 ns, PBGA64
封裝: 8 X 9.20 MM, LEAD FREE, TFBGA-64
文件頁(yè)數(shù): 85/86頁(yè)
文件大?。?/td> 2234K
代理商: S29NS512PABBJW003
February 20, 2007 S29NS-P_00_A1
S29NS-P MirrorBit
TM
Flash Family
85
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
12. Revision History
Section
Description
Revision A (June 29, 2006)
Initial release
Revision A1 (February 20, 2007)
Global
The tAVDS specification is changed from 4 ns to 5 ns
The wait state for 83 MHz is changed to 8
ICC3(Max) is changed to 70 μA and ICC6(Max) is changed to 40 μA
VIL (Min) is changed to -0.2 V
tOE (Max) in both Asynchronous & Synchronous modes is changed to 9 ns across all frequencies
tCEZ (Max) is changed to 10 ns across all frequencies
tOEZ (Max) in both Asynchronous & Synchronous modes is changed to 10 ns across all frequencies
tACH(Min) is changed to 6 ns (66 MHz) and 5 ns (83 MHz and 108 MHz)
tRDY(Max) is changed to 10 ns
tRACC(Max) is changed to 7.6 ns for 108 MHz
tOEH(Min) in Asynchronous mode is changed to 10 ns for 108 MHz
Erase and Programing Performance table is updated
tCE in Asynchronous mode is changed to 83ns
相關(guān)PDF資料
PDF描述
S29NS-P MirrorBit Flash Family
S29PL127N65GFWW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65GAWW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65GAWW03 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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S29NS-N_07 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS-P 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family