參數(shù)資料
型號(hào)： S29NS512PABBJW003
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MirrorBit Flash Family
中文描述： 32M X 16 FLASH 1.8V PROM, 80 ns, PBGA64
封裝： 8 X 9.20 MM, LEAD FREE, TFBGA-64
文件頁(yè)數(shù)： 45/86頁(yè)
文件大?。?/td> 2234K
代理商： S29NS512PABBJW003
February 20, 2007 S29NS-P_00_A1
S29NS-P MirrorBit
TM
Flash Family
45
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
the bank address and the data 90h. The second cycle need only contain the data 00h. The bank then returns
to the read mode.
The device offers accelerated program operations through the V
PP
input. When the system asserts V
HH
on
this input, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle
Unlock Bypass program command sequence. The device uses the higher voltage on the V
PP
input to
accelerate the operation.
Refer to the
Erase/Program Timing
section for parameters, and
Figures
10.12
and
10.13
for timing diagrams
Software Functions and Sample Code
The following are C source code examples of using the unlock bypass entry, program, and exit functions.
Refer to the
Spansion Low Level Driver User’s Guide
(
www.spansion.com
) for general information on
Spansion Flash memory software development guidelines.
/* Example: Unlock Bypass Entry Command
*( (UINT16 *)bank_addr + 0x555 ) = 0x00AA;
*( (UINT16 *)bank_addr + 0x2AA ) = 0x0055;
*( (UINT16 *)bank_addr + 0x555 ) = 0x0020;
/* At this point, programming only takes two write cycles.
/* Once you enter Unlock Bypass Mode, do a series of like
/* operations (programming or sector erase) and then exit
/* Unlock Bypass Mode before beginning a different type of
/* operations.
*/
/* write unlock cycle 1
/* write unlock cycle 2
/* write unlock bypass command
*/
*/
*/
*/
*/
*/
*/
*/
/* Example: Unlock Bypass Program Command
/* Do while in Unlock Bypass Entry Mode!
*( (UINT16 *)bank_addr + 0x555 ) = 0x00A0;
*( (UINT16 *)pa )
/* Poll until done or error.
/* If done and more to program, */
/* do above two cycles again.
*/
*/
/* write program setup command
/* write data to be programmed
*/
*/
= data;
*/
*/
/* Example: Unlock Bypass Exit Command */
*( (UINT16 *)base_addr + 0x000 ) = 0x0090;
*( (UINT16 *)base_addr + 0x000 ) = 0x0000;
Table 6.23
Unlock Bypass Entry
(LLD Function = lld_UnlockBypassEntryCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 554h
Base + 2AAh
0055h
3
Entry Command
Write
Base + AAAh
Base + 555h
0020h
Table 6.24
Unlock Bypass Program
(LLD Function = lld_UnlockBypassProgramCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Program Setup Command
Write
Base + xxxh
Base +xxxh
00A0h
2
Program Command
Write
Program Address
Program Address
Program Data
Table 6.25
Unlock Bypass Reset
(LLD Function = lld_UnlockBypassResetCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Reset Cycle 1
Write
Base + xxxh
Base +xxxh
0090h
2
Reset Cycle 2
Write
Base + xxxh
Base +xxxh
0000h
相關(guān)PDF資料
PDF描述
S29NS-P MirrorBit Flash Family
S29PL127N65GFWW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65GAWW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65GAWW03 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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S29NS-N_07 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS-P 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
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