- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385800 > S29GL064M90TFIR20 (SPANSION LLC) 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology PDF資料下載
參數(shù)資料
| 型號(hào)： | S29GL064M90TFIR20 |
| 廠商： | SPANSION LLC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| 中文描述： | 4M X 16 FLASH 3V PROM, 90 ns, PDSO56 |
| 封裝： | LEAD FREE, MO-142EC, TSOP-56 |
| 文件頁(yè)數(shù)： | 97/160頁(yè) |
| 文件大?。?/td> | 2142K |
| 代理商： | S29GL064M90TFIR20 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)當(dāng)前第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)第129頁(yè)第130頁(yè)第131頁(yè)第132頁(yè)第133頁(yè)第134頁(yè)第135頁(yè)第136頁(yè)第137頁(yè)第138頁(yè)第139頁(yè)第140頁(yè)第141頁(yè)第142頁(yè)第143頁(yè)第144頁(yè)第145頁(yè)第146頁(yè)第147頁(yè)第148頁(yè)第149頁(yè)第150頁(yè)第151頁(yè)第152頁(yè)第153頁(yè)第154頁(yè)第155頁(yè)第156頁(yè)第157頁(yè)第158頁(yè)第159頁(yè)第160頁(yè)
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
97
P r e l i m i n a r y
tion of the SecSi Sector without raising any device pin to a high voltage. Note
that this method is only applicable to the SecSi Sector.
To verify the protect/unprotect status of the SecSi Sector, follow the algo-
rithm shown in
Figure 1
.
Once the SecSi Sector is programmed, locked and verified, the system must write
the Exit SecSi Sector Region command sequence to return to reading and writing
within the remainder of the array.
Factory Locked: SecSi Sector Programmed and Protected At the
Factory
In devices with an ESN, the SecSi Sector is protected when the device is shipped
from the factory. The SecSi Sector cannot be modified in any way. An ESN Factory
Locked device has an 16-byte random ESN at addresses 000000h–000007h.
Please contact your sales representative for details on ordering ESN Factory
Locked devices.
Customers may opt to have their code programmed by the factory through the
Spansion programming service (Customer Factory Locked). The devices are then
shipped from the factory with the SecSi Sector permanently locked. Contact your
sales representative for details on using the Spansion programming service.
Write Protect (WP#)
The Write Protect function provides a hardware method of protecting the first or
last sector group without using V
ID
. Write Protect is one of two functions provided
by the WP#/ACC input.
If the system asserts V
IL
on the WP#/ACC pin, the device disables program and
erase functions in the first or last sector group independently of whether those
sector groups were protected or unprotected. Note that if WP#/ACC is at V
IL
when the device is in the standby mode, the maximum input load current is in-
creased. See the table in “DC Characteristics” section on page 122.
If the system asserts V
IH
on the WP#/ACC pin, the device reverts to
whether the first or last sector was previously set to be protected or un-
protected using the method described in “Sector Group Protection and
Unprotection”.
Note that WP# has an internal pullup; when uncon-
nected, WP# is at V
IH
.
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing
provides data protection against inadvertent writes (refer to Tables
16
and
17
for
command definitions). In addition, the following hardware data protection mea-
sures prevent accidental erasure or programming, which might otherwise be
caused by spurious system level signals during V
CC
power-up and power-down
transitions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not accept any write cycles. This pro-
tects data during V
CC
power-up and power-down. The command register and all
internal program/erase circuits are disabled, and the device resets to the read
mode. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system
must provide the proper signals to the control pins to prevent unintentional writes
when V
CC
is greater than V
LKO
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL064M90TFIR22 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL064M90TFIR23 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL064M90TFIR30 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL064M90TFIR32 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL064M90TFIR33 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064M90TFIR30 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TFIR4 | 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC |
| S29GL064M90TFIR40 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC |
| S29GL064M90TFIR60 | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TFIR7 | 制造商:Spansion 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。