參數(shù)資料
型號: S29GL064M90TFIR20
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
封裝: LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù): 113/160頁
文件大?。?/td> 2142K
代理商: S29GL064M90TFIR20
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
113
P r e l i m i n a r y
Command Definitions
Table 31. Command Definitions (x16 Mode, BYTE# = V
IH
)
Command
Sequence
(Note 1)
C
Bus Cycles (Notes 2–5)
Third
Addr
Data
First
Second
Addr
Fourth
Fifth
Sixth
Addr
RA
XXX
555
Data
RD
F0
AA
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 6)
1
1
4
Reset (Note 7)
A
Enter SecSi Sector Region
Manufacturer ID
2AA
55
555
90
X00
0001
Device ID (Note
9
)
4
555
AA
2AA
55
555
90
X01
227E
X0E
(Note
18)
X0F
(Note
18)
SecSi‰ Sector Factory Protect
(Note 10)
4
555
AA
2AA
55
555
90
X03
(Note 10)
Sector Group Protect Verify (Note
12)
4
555
AA
2AA
55
555
90
(SA)X02
00/01
3
4
4
3
1
3
3
2
2
6
6
1
1
1
555
555
555
555
SA
555
555
XXX
XXX
555
555
XXX
XXX
55
AA
AA
AA
AA
29
AA
AA
A0
90
AA
AA
B0
30
98
2AA
2AA
2AA
2AA
55
55
55
55
555
555
555
SA
88
90
A0
25
Exit SecSi Sector Region
XXX
PA
SA
00
PD
WC
Program
Write to Buffer (Note 11)
PA
PD
WBL
PD
Program Buffer to Flash
Write to Buffer Abort Reset (Note 13)
2AA
2AA
PA
XXX
2AA
2AA
55
55
PD
00
55
55
555
555
F0
20
Unlock Bypass
Unlock Bypass Program (Note 14)
Unlock Bypass Reset (Note 15)
Chip Erase
555
555
80
80
555
555
AA
AA
2AA
2AA
55
55
555
SA
10
30
Sector Erase
Program/Erase Suspend (Note 16)
Program/Erase Resume (Note 17)
CFI Query (Note 18)
Legend:
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or
CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of
WE# or CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes:
1.
2.
3.
4.
See
Table 1
for description of bus operations.
All values are in hexadecimal.
Shaded cells indicate read cycles. All others are write cycles.
During unlock and command cycles, when lower address bits are
555 or 2AA as shown in table, address bits above A11 and data
bits above DQ7 are don’t care.
No unlock or command cycles required when device is in read
mode.
Reset command is required to return to read mode (or to erase-
suspend-read mode if previously in Erase Suspend) when device
is in autoselect mode, or if DQ5 goes high while device is
providing status information.
Fourth cycle of the autoselect command sequence is a read
cycle. Data bits DQ15–DQ8 are don’t care. Except for RD, PD
and WC. See
Autoselect Command Sequence
section for more
information.
Device ID must be read in three cycles.
If WP# protects highest address sector, data is 98h for factory
locked and 18h for not factory locked. If WP# protects lowest
address sector, data is 88h for factory locked and 08h for not
factor locked.
5.
6.
7.
8.
9.
10. Data is 00h for an unprotected sector group and 01h for a
protected sector group.
11. Total number of cycles in command sequence is determined by
number of words written to write buffer. Maximum number of
cycles in command sequence is 21, including “Program Buffer to
Flash” command.
12. Command sequence resets device for next command after
aborted write-to-buffer operation.
13. Unlock Bypass command is required prior to Unlock Bypass
Program command.
14. Unlock Bypass Reset command is required to return to read
mode when device is in unlock bypass mode.
15. System may read and program in non-erasing sectors, or enter
autoselect mode, when in Erase Suspend mode. Erase Suspend
command is valid only during a sector erase operation.
16. Erase Resume command is valid only during Erase Suspend
mode.
17. Command is valid when device is ready to read array data or
when device is in autoselect mode.
18. Refer to Table 14, AutoSelect Codes for individual Device IDs
per device density and model number.
相關(guān)PDF資料
PDF描述
S29GL064M90TFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR30 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR32 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR33 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064M90TFIR30 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray
S29GL064M90TFIR4 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC
S29GL064M90TFIR40 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC
S29GL064M90TFIR60 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray
S29GL064M90TFIR7 制造商:Spansion 功能描述: