參數(shù)資料
型號： S29GL064M90TFIR20
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述： 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
封裝： LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù)： 108/160頁
文件大?。?/td> 2142K
代理商： S29GL064M90TFIR20
108
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Figure 4. Program Operation
Program Suspend/Program Resume Command Sequence
The Program Suspend command allows the system to interrupt a programming
operation or a Write to Buffer programming operation so that data can be read
from any non-suspended sector. When the Program Suspend command is written
during a programming process, the device halts the program operation within 15
μ
s maximum (5
μ
s typical) and updates the status bits. Addresses are not re-
quired when writing the Program Suspend command.
After the programming operation has been suspended, the system can read array
data from any non-suspended sector. The Program Suspend command may also
be issued during a programming operation while an erase is suspended. In this
case, data may be read from any addresses not in Erase Suspend or Program
Suspend. If a read is needed from the SecSi Sector area (One-time Program
area), then user must use the proper command sequences to enter and exit this
region. Note that the SecSi Sector, autoselect, and CFI functions are unavailable
when a program operation is in progress.
The system may also write the autoselect command sequence when the device
is in the Program Suspend mode. The system can read as many autoselect codes
as required. When the device exits the autoselect mode, the device reverts to the
Program Suspend mode, and is ready for another valid operation. See Autoselect
Command Sequence for more information.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note:
See Table
31
and Table
32
for program com-
mand sequence.
相關PDF資料
PDF描述
S29GL064M90TFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR30 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR32 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR33 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關代理商/技術參數(shù)
參數(shù)描述
S29GL064M90TFIR30 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray
S29GL064M90TFIR4 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC
S29GL064M90TFIR40 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC
S29GL064M90TFIR60 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray
S29GL064M90TFIR7 制造商:Spansion 功能描述:
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