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| 型號(hào)： | S29GL064M90TFIR20 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| 中文描述： | 4M X 16 FLASH 3V PROM, 90 ns, PDSO56 |
| 封裝： | LEAD FREE, MO-142EC, TSOP-56 |
| 文件頁(yè)數(shù)： | 129/160頁(yè) |
| 文件大?。?/td> | 2142K |
| 代理商： | S29GL064M90TFIR20 |
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April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
129
P r e l i m i n a r y
AC Characteristics
Erase and Program Operations-S29GL128M only
Notes:
1.
Not 100% tested.
2.
See the “Erase and Programming Performance” section for more information.
3.
For 1–16 words/1–32 bytes programmed.
4.
If a program suspend command is issued within t
, the device requires t
before reading status data, once programming has resumed
(that is, the program resume command has been written). If the suspend command was issued after t
POLL
, status data is available imme-
diately after programming has resumed. See Figure 17.
Parameter
Speed Options
Unit
JEDEC
Std.
Description
90
10
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high during toggle bit
polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
CEPH
CE# High during toggle bit polling
Min
20
ns
t
OEPH
OE# High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Single Word Program Operation (Note 2)
Typ
60
Accelerated Single Word Program Operation (Note 2)
Typ
54
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
BUSY
WE# High to RY/BY# Low
Min
90
100
ns
t
POLL
Program Valid before Status Polling
Max
4
μs
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PDF描述 |
|---|---|
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| S29GL064M90TFIR30 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL064M90TFIR32 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL064M90TFIR33 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064M90TFIR30 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TFIR4 | 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC |
| S29GL064M90TFIR40 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC |
| S29GL064M90TFIR60 | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TFIR7 | 制造商:Spansion 功能描述: |
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