參數(shù)資料
型號(hào): S29GL064M90TFIR20
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
封裝: LEAD FREE, MO-142EC, TSOP-56
文件頁(yè)數(shù): 112/160頁(yè)
文件大?。?/td> 2142K
代理商: S29GL064M90TFIR20
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112
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
gram operation using the DQ7 or DQ6 status bits, just as in the standard word
program operation. Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also issue the autoselect com-
mand sequence. Refer to the “Autoselect Mode” section on page 78 and
“Autoselect Command Sequence” section on page 103 sections for details.
To resume the sector erase operation, the system must write the Erase Resume
command. Further writes of the Resume command are ignored. Another Erase
Suspend command can be written after the chip has resumed erasing.
Note: During an erase operation, this flash device performs multiple internal op-
erations which are invisible to the system. When an erase operation is
suspended, any of the internal operations that were not fully completed must be
restarted. As such, if this flash device is continually issued suspend/resume com-
mands in rapid succession, erase progress will be impeded as a function of the
number of suspends. The result will be a longer cumulative erase time than with-
out suspends. Note that the additional suspends do not affect device reliability or
future performance. In most systems rapid erase/suspend activity occurs only
briefly. In such cases, erase performance will not be significantly impacted.
相關(guān)PDF資料
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S29GL064M90TFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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