型號(hào) 廠商 描述
s29gl064m90fcir10
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Spansion Inc. MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
s29gl064m90fcir12
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fcir13
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fcir20
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fcir22
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fcir23
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fcir30
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fcir32
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fcir33
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fdir00
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fdir02
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fdir03
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fdir10
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fdir12
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fdir13
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90fdir20
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tair20
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tair22
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tair23
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tbir00
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tbir02
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tbir03
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tbir10
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tbir12
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tbir13
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tbir20
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tbir22
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tbir23
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tbir30
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tbir32
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Spansion Inc. MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
s29gl064m90tbir33
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Spansion Inc. MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
s29gl064m90tfir02
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tfir03
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tfir10
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tfir12
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tfir13
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tfir20
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tfir22
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tfir23
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tfir30
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tfir32
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl064m90tfir33
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl128m90fair10
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl128m90fair12
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl128m90fair13
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SPANSION LLC MOSFET, Switching; VDSS (V): -30; ID (A): -14; Pch : 2.5; RDS (ON) typ. (ohm) @10V: 0.009; RDS (ON) typ. (ohm) @4V[4.5V]: [0.015]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3500; toff (µs) typ: 0.31; Package: SOP-8
s29gl128m90fair20
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SPANSION LLC MOSFET, Switching; VDSS (V): -30; ID (A): -14; Pch : 2.5; RDS (ON) typ. (ohm) @10V: 0.009; RDS (ON) typ. (ohm) @4V[4.5V]: [0.015]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3500; toff (µs) typ: 0.31; Package: SOP-8
s29gl128m90fair22
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SPANSION LLC 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
s29gl128m90fair23
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SPANSION LLC MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 2.0/3.0; RDS (ON) typ. (ohm) @10V: 0.06; RDS (ON) typ. (ohm) @4V[4.5V]: [0.09]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1350; toff (µs) typ: 0.055; Package: SOP-8
s29gl128m90fair80
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Spansion Inc. MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 2.0/3.0; RDS (ON) typ. (ohm) @10V: 0.06; RDS (ON) typ. (ohm) @4V[4.5V]: [0.09]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1350; toff (µs) typ: 0.055; Package: SOP-8
s29gl128m90fair82
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Spansion Inc. 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology