參數(shù)資料
型號(hào)： S29GL064M90TFIR10
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述： 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
封裝： LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù)： 5/160頁
文件大?。?/td> 2142K
代理商： S29GL064M90TFIR10
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
5
Figure 8. Toggle Bit Algorithm............................................ 118
DQ2: Toggle Bit II ..............................................................................................118
Reading Toggle Bits DQ6/DQ2 .....................................................................119
DQ5: Exceeded Timing Limits .......................................................................119
DQ3: Sector Erase Timer ................................................................................119
DQ1: Write-to-Buffer Abort .........................................................................120
Table 33. Write Operation Status ........................................120
Figure 9. Maximum Negative Overshoot Waveform............... 121
Figure 10. Maximum Positive
Overshoot Waveform........................................................ 121
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 121
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 122
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 11. Test Setup ....................................................... 123
Table 34. Test Specifications ..............................................123
Key to Switching Waveforms . . . . . . . . . . . . . . 123
Figure 12. Input Waveforms and
Measurement Levels......................................................... 123
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 124
Read-Only Operations-S29GL256M only ..................................................124
Read-Only Operations-S29GL128M only ...................................................124
Read-Only Operations-S29GL064M only ..................................................125
Read-Only Operations-S29GL032M only ..................................................125
Figure 13. Read Operation Timings..................................... 126
Figure 14. Page Read Timings............................................ 126
Hardware Reset (RESET#) .............................................................................127
Figure 15. Reset Timings................................................... 127
Erase and Program Operations-S29GL256M only ..................................128
Erase and Program Operations-S29GL128M only ...................................129
Erase and Program Operations-S29GL064M only ..................................130
Erase and Program Operations-S29GL032M only ...................................131
Figure 16. Program Operation Timings................................ 132
Figure 17. Accelerated Program Timing Diagram .................. 132
Figure 18. Chip/Sector Erase Operation Timings................... 133
Figure 19. Data# Polling Timings
(During Embedded Algorithms).......................................... 134
Figure 20. Toggle Bit Timings (During Embedded Algorithms) 135
Figure 21. DQ2 vs. DQ6.................................................... 135
Temporary Sector Unprotect .......................................................................136
Figure 22. Temporary Sector Group Unprotect Timing
Diagram ......................................................................... 136
Figure 23. Sector Group Protect and Unprotect Timing
Diagram ......................................................................... 137
Alternate CE# Controlled Erase and Program
Operations-S29GL256M ..................................................................................138
Alternate CE# Controlled Erase and Program
Operations-S29GL128M ..................................................................................139
Alternate CE# Controlled Erase and Program
Operations-S29GL064M .................................................................................140
Alternate CE# Controlled Erase and Program
Operations-S29GL032M ...................................................................................141
Figure 24. Alternate CE# Controlled Write (Erase/Program)
Operation Timings............................................................ 142
Erase And Programming Performance . . . . . . . .143
TSOP Pin and BGA Package Capacitance . . . . .144
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . .145
TS040—40-Pin Standard Thin Small Outline Package ...........................145
TS048—48-Pin Standard/Reverse Thin Small Outline
Package (TSOP) .................................................................................................147
TSR048—48-Pin Standard/Reverse Thin Small Outline
Package (TSOP) .................................................................................................148
TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline Package
(TSOP) ..................................................................................................................149
LAA064—64-Ball Fortified Ball Grid Array (FBGA) ..............................150
LAC064—64-Pin 18 x 12 mm package ..........................................................151
FBA048—48-Pin 6.15 x 8.15 mm package ...................................................152
FBC048—48-Pin 8 x 9 mm package ...........................................................153
FBE063—63-Pin 12 x 11 mm package ............................................................154
FPT-48P-M19 .......................................................................................................155
FPT-56P-M01 .......................................................................................................156
BGA-48P-M20 ....................................................................................................157
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . .158
Pin Description ..............................................................................................159
Logic Symbols .................................................................................................160
相關(guān)PDF資料
PDF描述
S29GL064M90TFIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064M90TFIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray
S29GL064M90TFIR30 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray
S29GL064M90TFIR4 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC
S29GL064M90TFIR40 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC
S29GL064M90TFIR60 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray
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