參數(shù)資料
型號(hào)： S29GL064M90TBIR32
廠商： Spansion Inc.
英文描述： MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
中文描述： 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
文件頁數(shù)： 12/160頁
文件大?。?/td> 2142K
代理商： S29GL064M90TBIR32
12
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Connection Diagrams
Notes:
1. Ball C5 is NC on S29GL032M.
2. Ball B8 is NC on S29GL064M and S29GL032M.
3. Ball C8 is NC on S29GL128M, S29GL064M and S29GL032M.
4. Ball D8 and Ball F1 are NC on S29GL064M (models R3, R4).
5. Ball F7 is NC on S29GL064M (model R5).
Special Package Handling Instructions
Special handling is required for Flash Memory products in moulded packages (TSOP and BGA). The
package and/or data integrity may be compromised if the package body is exposed to temperatures
above 150°C for prolonged periods of time.
A2
C2
D2
E2
F2
G2
H2
V
SS
A3
C3
D3
E3
F3
G3
H3
A4
C4
D4
E4
F4
G4
H4
A5
C5
D5
E5
F5
G5
V
CC
H5
A6
C6
D6
E6
F6
G6
H6
A7
C7
D7
E7
F7
G7
H7
DQ15/A-1
V
SS
BYTE#
5
A16
A15
A14
A12
A13
DQ13
DQ6
DQ14
DQ7
A11
A10
A8
A9
DQ4
DQ12
DQ5
A19
A21
1
RESET#
WE#
DQ11
DQ3
DQ10
DQ2
A20
A18
WP#/ACC
RY/BY#
DQ9
DQ1
DQ8
DQ0
A5
A6
A17
A7
OE#
CE#
A0
A1
A2
A4
A3
A1
C1
D1
E1
F1
V
IO4
G1
H1
NC
NC
NC
NC
NC
NC
NC
A8
C8
B2
B3
B4
B5
B6
B7
B1
B8
D8
E8
F8
G8
H8
NC
NC
NC
V
SS
V
IO4
A23
3
A22
2
NC
64-ball Fortified BGA
Top View, Balls Facing Down
相關(guān)PDF資料
PDF描述
S29GL064M90TBIR33 MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
S29GL064M90TFIR02 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR03 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TFIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064M90TFIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray
S29GL064M90TFIR30 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray
S29GL064M90TFIR4 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC
S29GL064M90TFIR40 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC
S29GL064M90TFIR60 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray
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