參數(shù)資料
型號： S29GL128M90FAIR23
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 2.0/3.0; RDS (ON) typ. (ohm) @10V: 0.06; RDS (ON) typ. (ohm) @4V[4.5V]: [0.09]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1350; toff (µs) typ: 0.055; Package: SOP-8
中文描述： 8M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝： 13 X 11 MM, FORTIFIED, BGA-64
文件頁數(shù)： 2/160頁
文件大?。?/td> 2142K
代理商： S29GL128M90FAIR23
2
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash
memory manufactured using 0.23 um MirrorBit technology. The S29GL256M is a
256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M
is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The
S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The
S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. De-
pending on the model number, the devices have an 8-bit wide data bus only, 16-
bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-
bit wide data bus by using the BYTE# input. The devices can be programmed ei-
ther in the host system or in standard EPROM programmers.
Access times as fast as 90 ns (S29GL128M, S29GL064M, S29GL032M) or 100 ns
(S29GL256M) are available. Note that each access time has a specific operating
voltage range (V
CC
) as specified in the
Product Selector Guide
and the
Ordering
Information
sections. Package offerings include 40-pin TSOP, 48-pin TSOP, 56-pin
TSOP, 48-ball fine-pitch BGA, 63-ball fine-pitch BGA and 64-ball Fortified BGA,
depending on model number. Each device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.
Each device requires only a
single 3.0 volt power supply
for both read and
write functions. In addition to a V
CC
input, a high-voltage
accelerated program
(ACC)
feature provides shorter programming times through increased current on
the WP#/ACC input. This feature is intended to facilitate factory throughput dur-
ing system production, but may also be used in the field if desired.
The device is entirely command set compatible with the
JEDEC single-power-
supply Flash standard
. Commands are written to the device using standard mi-
croprocessor write timing. Write cycles also internally latch addresses and data
needed for the programming and erase operations.
The
sector erase architecture
allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through command sequences.
Once a program or erase operation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle)
status bits
or monitor the
Ready/Busy#
(RY/BY#)
output to determine whether the operation is complete. To facilitate
programming, an
Unlock Bypass
mode reduces command sequence overhead
by requiring only two write cycles to program data instead of four.
Hardware data protection
measures include a low V
CC
detector that automat-
ically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase operations in any combina-
tion of sectors of memory. This can be achieved in-system or via programming
equipment.
The
Erase Suspend/Erase Resume
feature allows the host system to pause an
erase operation in a given sector to read or program any other sector and then
complete the erase operation. The
Program Suspend/Program Resume
fea-
ture enables the host system to pause a program operation in a given sector to
read any other sector and then complete the program operation.
The
hardware RESET# pin
terminates any operation in progress and resets the
device, after which it is then ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would thus also reset the device,
相關(guān)PDF資料
PDF描述
S29GL128M90FAIR80 MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 2.0/3.0; RDS (ON) typ. (ohm) @10V: 0.06; RDS (ON) typ. (ohm) @4V[4.5V]: [0.09]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1350; toff (µs) typ: 0.055; Package: SOP-8
S29GL128M90FAIR82 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FAIR83 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FDIR10 MOSFET, Switching; VDSS (V): -200; ID (A): -0.25; Pch : -; RDS (ON) typ. (ohm) @10V: 5; RDS (ON) typ. (ohm) @4V[4.5V]: 6; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: TSSOP-8
S29GL128M90FDIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128M90TAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128M90TAIR13 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 90NS 56TSOP - Tape and Reel
S29GL128M90TFIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128
S29GL128N10FFI020 制造商:Spansion 功能描述:Flash - NOR IC
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