參數(shù)資料
型號： S29GL128M90FAIR83
廠商： Spansion Inc.
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述： 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
文件頁數(shù)： 1/160頁
文件大小： 2142K
代理商： S29GL128M90FAIR83
Publication Number
S29GLxxxM_00
Revision
A
Amendment
5
Issue Date
April 30, 2004
PRELIMINARY
S29GLxxxM MirrorBit
TM
Flash Family
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
0.23 um MirrorBit process technology
Datasheet
Distinctive Characteristics
Architectural Advantages
Single power supply operation
— 3 volt read, erase, and program operations
Manufactured on 0.23 um MirrorBit process
technology
SecSi
(Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— 256Mb: 512 32 Kword (64 Kbyte) sectors
— 128Mb: 256 32 Kword (64 Kbyte) sectors
— 64Mb (uniform sector models): 128 32 Kword (64
Kbyte) sectors or 128 32 Kword sectors
— 64Mb (boot sector models): 127 32 Kword (64 Kbyte)
sectors + 8 4Kword (8Kbyte) boot sectors
— 32Mb (uniform sector models): 64 32Kword (64
Kbyte) sectors of 64 32Kword sectors
— 32Mb (boot sector models): 63 32Kword (64 Kbyte)
sectors + 8 4Kword (8Kbyte) boot sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
100,000 erase cycles typical per sector
20-year data retention typical
Performance Characteristics
High performance
— 90 ns access time (128Mb, 64Mb, 32Mb),
100 ns access time (256Mb)
— 4-word/8-byte page read buffer
— 25 ns page read times (128Mb, 64Mb, 32Mb)
— 30 ns page read times (256Mb)
— 16-word/32-byte write buffer
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Low power consumption (typical values at 3.0 V, 5
MHz)
— 18 mA typical active read current (64 Mb, 32 Mb)
— 25 mA typical active read current (256 Mb, 128 Mb)
— 50 mA typical erase/program current
— 1 μA typical standby mode current
Package options
— 40-pin TSOP
— 48-pin TSOP
— 56-pin TSOP
— 64-ball Fortified BGA
— 48-ball fine-pitch BGA
— 63-ball fine-pitch BGA
Software & Hardware Features
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
— Unlock Bypass Program command reduces overall
multiple-word programming time
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
charging code in locked sectors
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings on uniform
sector models
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
相關(guān)PDF資料
PDF描述
S29GL128M90FDIR10 MOSFET, Switching; VDSS (V): -200; ID (A): -0.25; Pch : -; RDS (ON) typ. (ohm) @10V: 5; RDS (ON) typ. (ohm) @4V[4.5V]: 6; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: TSSOP-8
S29GL128M90FDIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TAIR80 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TAIR82 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TAIR83 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128M90TAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128M90TAIR13 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 90NS 56TSOP - Tape and Reel
S29GL128M90TFIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128
S29GL128N10FFI020 制造商:Spansion 功能描述:Flash - NOR IC
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*