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參數(shù)資料
| 型號： | M58MR064D120ZC6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 51/52頁 |
| 文件大?。?/td> | 399K |
| 代理商： | M58MR064D120ZC6T |
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M58MR064C, M58MR064D
8/52
Table 7. Read Protection Register (RSIG and RCFI Instruction) (1)
Note: 1. Addresses are latched on the rising edge of L input.
2. X = Don't care.
Table 8. Dual Bank Operations (1,2,3)
Note: 1. For detailed description of command see Table 33 and 34.
2. There is a status register for each bank; status register indicates bank state, not P/E.C. status.
3. Command must be written to an address within the block targeted by that command.
Word
E
G
W
A21-17
ADQ15-8
ADQ7-0
ADQ15-8
ADQ7-3
ADQ2
ADQ1
ADQ0
Lock
VIL
VIH
X (2)
80h
00h
00000B
Security
prot.data
OTP
prot.data
0
Unique
ID 0
VIL
VIH
X (2)
81h
ID data
Unique
ID 1
VIL
VIH
X (2)
82h
ID data
Unique
ID 2
VIL
VIH
X (2)
83h
ID data
Unique
ID 3
VIL
VIH
X (2)
84h
ID data
OTP 0
VIL
VIH
X (2)
85h
OTP data
OTP
data
OTP
data
OTP
data
OTP
data
OTP 1
VIL
VIH
X (2)
86h
OTP data
OTP
data
OTP
data
OTP
data
OTP
data
OTP 2
VIL
VIH
X (2)
87h
OTP data
OTP
data
OTP
data
OTP
data
OTP
data
OTP 3
VIL
VIH
X (2)
88h
OTP data
OTP
data
OTP
data
OTP
data
OTP
data
Status of one
bank
Commands allowed in the other bank
Read
Array
Read
Status
Read
ID/CFI
Program
Erase/
Erase
Resume
Program
Suspend
Erase
Suspend
Protect
Unprotect
Idle
Yes
Reading
––––––––
Programming
Yes
––––
Yes
Erasing
Yes
––––
Yes
Program
Suspended
Yes
––––
Yes
Erase
Suspended
Yes
–
Yes
–
Yes
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| M58MR064DZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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| M58PR001LE96ZAC5 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
| M58PR001LE96ZAD5 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |