- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄354173 > M58MR064D120ZC6T (意法半導(dǎo)體) 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M58MR064D120ZC6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 19/52頁 |
| 文件大?。?/td> | 399K |
| 代理商： | M58MR064D120ZC6T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁當(dāng)前第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁
M58MR064C, M58MR064D
26/52
Table 20. Device Geometry Definition
Offset Word
Mode
Data
Description
Value
27h
0017h
Device Size = 2n in number of bytes
8 MByte
28h
29h
0001h
0000h
Flash Device Interface Code description
x16
Async.
2Ah
2Bh
0003h
0000h
Maximum number of bytes in multi-byte program or page = 2n
8Byte
2Ch
0003h
Number of Erase Block Regions within the device
bit 7 to 0 = x = number of Erase Block Regions
It specifies the number of regions within the device containing one or more
contiguous Erase Blocks of the same size.
3
M
58MR
064C
2Dh
2Eh
005Fh
0000h
Region 1 Information (main block - Bank B)
Number of identical-size erase block = 005Fh+1
96
2Fh
30h
0000h
0001h
Region 1 Information (main block - Bank B)
Block size in Region 1 = 0100h * 256 byte
64 KByte
31h
32h
001Eh
0000h
Region 2 Information (main block - Bank A)
Number of identical-size erase block = 001Eh+1
31
33h
34h
0000h
0001h
Region 2 Information (main block - Bank A)
Block size in Region 2 = 0100h * 256 byte
64 KByte
35h
36h
0007h
0000h
Region 3 Information (parameter block - Bank A)
Number of identical-size erase block = 0007h+1
8
37h
38h
0020h
0000h
Region 3 Information (parameter block - Bank A)
Block size in Region 3 = 0020h * 256 byte
8 KByte
M
58MR
064D
2Dh
2Eh
0007h
0000h
Region 1 Information (parameter block - Bank A)
Number of identical-size erase block = 0007h+1
8
2Fh
30h
0020h
0000h
Region 1 Information (parameter block - Bank A)
Block size in Region 1 = 0020h * 256 byte
8 KByte
31h
32h
001Eh
0000h
Region 2 Information (main block - Bank A)
Number of identical-size erase block = 001Eh+1
31
33h
34h
0000h
0001h
Region 2 Information (main block - Bank A)
Block size in Region 2 = 0001h * 256 byte
64 KByte
35h
36h
005Fh
0000h
Region 3 Information (parameter block - Bank B)
Number of identical-size erase block = 005Fh+1
96
37h
38h
0000h
0001h
Region 3 Information (parameter block - Bank B)
Block size in Region 3 = 0001h * 256 byte
64 KByte
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59MR032C100ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032D100ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032C120ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M59MR032D120ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M28R400C-ZBU | 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58MR064DZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064-ZCT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58PR001LE | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
| M58PR001LE96ZAC5 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
| M58PR001LE96ZAD5 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。