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參數資料
| 型號： | M58MR064D120ZC6T |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的x16插槽，復用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數： | 18/52頁 |
| 文件大?。?/td> | 399K |
| 代理商： | M58MR064D120ZC6T |
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M58MR064C, M58MR064D
Table 19. CFI Query System Interface Information
Offset
Data
Description
Value
1Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
1Ch
0020h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
2V
1Dh
0017h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
1Eh
00C0h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
12V
1Fh
0004h
Typical timeout per single byte/word program = 2n s
16s
20h
0004h
Typical timeout for tetra word program = 2n s
16s
21h
000Ah
Typical timeout per individual block erase = 2n ms
1s
22h
0000h
Typical timeout for full chip erase = 2n ms
NA
23h
0004h
Maximum timeout for word program = 2n times typical
256s
24h
0004h
Maximum timeout for tetra word = 2n times typical
256s
25h
0004h
Maximum timeout per individual block erase = 2n times typical
16s
26h
0000h
Maximum timeout for chip erase = 2n times typical
NA
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| M59MR032C100ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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| M59MR032C120ZC6T | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| M58MR064DZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064-ZCT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58PR001LE | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
| M58PR001LE96ZAC5 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
| M58PR001LE96ZAD5 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
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