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參數(shù)資料
| 型號(hào)： | M58MR064D120ZC6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 25/52頁 |
| 文件大小： | 399K |
| 代理商： | M58MR064D120ZC6T |
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M58MR064C, M58MR064D
Table 27. Asynchronous Read AC Characteristics
(TA = –40 to 85°C; VDD =VDDQ = 1.65V to 2.0V)
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV -tGLQV after the falling edge of E without increasing tELQV.
Symbol
Alt
Parameter
Test Condition
M58MR064
Unit
100
120
Min
Max
Min
Max
tAVAV
tRC
Address Valid to Next
Address Valid
E =VIL,G =VIL
100
120
ns
tAVLH
tAVAVDH
Address valid to Latch
Enable High
G =VIH
10
ns
tAVQV
tACC
Address Valid to Output
Valid (Random)
E =VIL,G =VIL
100
120
ns
tAVQV1
tPAGE
Address Valid to Output
Valid (Page)
E =VIL,G =VIL
45
ns
tEHQX
tOH
Chip Enable High to Output
Transition
G =VIL
00
ns
tEHQZ
(1)
tHZ
Chip Enable High to Output
Hi-Z
G =VIL
20
ns
tELLH
tELAVDH
Chip Enable Low to Latch
Enable High
E =VIL,G =VIH
10
ns
tELQV
(2)
tCE
Chip Enable Low to Output
Valid
G =VIL
100
120
ns
tELQX
(1)
tLZ
Chip Enable Low to Output
Transition
G =VIL
00
ns
tGHQX
tOH
Output Enable High to
Output Transition
E =VIL
00
ns
tGHQZ
(1)
tDF
Output Enable High to
Output Hi-Z
E =VIL
20
ns
tGLQV
(2)
tOE
Output Enable Low to
Output Valid
E =VIL
25
35
ns
tGLQX
(1)
tOLZ
Output Enable Low to
Output Transition
E =VIL
00
ns
tLHAX
tAVDHAX
Latch Enable High to
Address Transition
E =VIL,G =VIH
10
ns
tLHGL
Latch Enable High to
Output Enable Low
E =VIL
10
ns
tLLLH
tAVDLAVDH
Latch Enable Pulse Width
E =VIL,G =VIH
10
ns
tLLQV
tAVDLQV
Latch Enable Low to
Output Valid (Random)
E =VIL
100
120
ns
tLLQV1
Latch Enable Low to
Output Valid (Page)
E =VIL
45
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58MR064DZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064-ZCT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58PR001LE | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
| M58PR001LE96ZAC5 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
| M58PR001LE96ZAD5 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
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