參數(shù)資料
型號: L29S800F
廠商: Electronic Theatre Controls, Inc.
英文描述: 8MEGABIT (1M】8 /512K】16) 3 VOLT CMOS FLASH MEMERY
中文描述: 8MEGABIT(100萬】8 / 16】為512k)3伏的CMOS閃存MEMERY
文件頁數(shù): 8/54頁
文件大小: 797K
代理商: L29S800F
L29S800F
PRELIMINARY
A
8MEGABIT (1M×8 /512K×16)
3 VOLT CMOS FLASH MEMERY
LinkSmart
8
071802
Table 3 L29S800F/-B User Bus Operations (BYTE = V
IL
)
Operation
CE
OE
WE
DQ
15
/
A
-1
A
0
A
1
A
6
A
9
DQ
0
to DQ
7
RESET
Auto-Select Manufacturer Code (1)
L
L
H
L
L
L
L
V
ID
Code
H
Auto-Select Device Code (1)
L
L
H
L
H
L
L
V
ID
Code
H
Read (3)
L
L
H
A
-1
A
0
A
1
A
6
A
9
D
OUT
H
Standby
H
X
X
X
X
X
X
X
HIGH-Z
H
Output Disable
L
H
H
X
X
X
X
X
HIGH-Z
H
Write (Program/Erase)
L
H
L
A
-1
A
0
A
1
A
6
A
9
D
IN
H
Enable Sector Protection (2), (4)
L
V
ID
L
L
H
L
V
ID
X
H
Verify Sector Protection (2), (4)
L
L
H
L
L
H
L
V
ID
Code
H
Temporary Sector Unprotection
X
X
X
X
X
X
X
X
X
V
ID
Reset (Hardware)/Standby
X
X
X
X
X
X
X
X
HIGH-Z
L
Legend:
L = V
IL
, H = V
IH
, X = V
IL
or V
IH
,
Notes:
1. Manufacturer and device codes may also be accessed via a command register write sequence.
See Table 7.
2. Refer to the section on Sector Protection.
3.
WE
can be V
IL
if
OE
is V
IL
,
OE
at V
IH
initiates the write operations.
4. V
CC
= 3.3 V ± 10%
5. It is also used for the extended sector protection.
= Pulse input. See DC Characteristics for voltage levels.
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