參數(shù)資料
型號(hào): KBE00F005A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Mb NAND*2 + 256Mb Mobile SDRAM*2
中文描述: 的512Mb的NAND * 2 256Mb的移動(dòng)SDRAM * 2
文件頁數(shù): 27/87頁
文件大?。?/td> 1353K
代理商: KBE00F005A
KBE00F005A-D411
MCP MEMORY
June 2005
27
Revision 1.0
Multi-Plane Block Erase Operation into Plane 0~3 or Plane 4~7
Block Erase Setup Command
Erase Confirm Command
Read Multi-Plane
Status Command
Max. 4 times repeatable
60h
A
9
~ A
26
I/O
0
~
7
R/B
Address
60h
Address
60h
Address
60h
Address
D0h
71h
t
BERS
* For Multi-Plane Erase operation, Block address to be erased should be repeated before "D0H" command.
Ex.) Four-Plane Block Erase Operation
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
60h
A
17
~ A
24
A
9
~ A
16
DOh
71h
I/O 0
Busy
t
WB
t
BERS
Page(Row)
Address
t
WC
A
25,
A
26
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KBE00F005A-D411 512Mb NAND*2 + 256Mb Mobile SDRAM*2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KBE00F005A-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb NAND*2 + 256Mb Mobile SDRAM*2
KBE00G003M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2
KBE00G003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2
KBE00S003M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2