- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄373103 > KBE00F005A (SAMSUNG SEMICONDUCTOR CO. LTD.) 512Mb NAND*2 + 256Mb Mobile SDRAM*2 PDF資料下載
參數(shù)資料
| 型號(hào)： | KBE00F005A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb NAND*2 + 256Mb Mobile SDRAM*2 |
| 中文描述： | 的512Mb的NAND * 2 256Mb的移動(dòng)SDRAM * 2 |
| 文件頁(yè)數(shù)： | 13/87頁(yè) |
| 文件大小： | 1353K |
| 代理商： | KBE00F005A |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)當(dāng)前第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)
KBE00F005A-D411
MCP MEMORY
June 2005
13
Revision 1.0
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less
Parameter
Symbol
Test Conditions
Value
Unit
Min
Typ
Max
Operating
Current
Sequential Read
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
10
20
mA
Program
I
CC
2
-
-
10
20
Erase
I
CC
3
-
-
10
20
Stand-by Current
(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
Stand-by Current
(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
Input High Voltage
V
IH*
I/O pins
V
CCQ
-0.4
-
V
CCQ
+0.3
V
Except I/O pins
V
CC
-0.4
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.5
Output High Voltage Level
V
OH
I
OH
-100
μ
A
V
CCQ
-0.4
-
-
Output Low Voltage Level
V
OL
I
OH
=100
μ
A
-
-
0.4
Output Low Current
(R/B)
I
OL
(R/B)
V
OL
=0.1V
3
4
-
mA
Valid Block
NOTE
:
1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these
invalid blocks for program and erase. Refer to the attached technical notes for an appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
cycles.
3. Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
8,052
-
8,192
Blocks
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KBE00F005A-D411 | 512Mb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00S003M | 1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00S003M-D411 | 1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBJ408G | 4.0A GLASS PASSIVATED BRIDGE RECTIFIER |
| KBJ4005G | 4.0A GLASS PASSIVATED BRIDGE RECTIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KBE00F005A-D411 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00G003M | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2 |
| KBE00G003M-D411 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2 |
| KBE00S003M | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00S003M-D411 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。