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參數(shù)資料
| 型號： | K4T1G044QC-ZCLE6 |
| 元件分類： | DRAM |
| 英文描述： | 256M X 4 DDR DRAM, 0.45 ns, PBGA60 |
| 封裝： | ROHS COMPLIANT, FBGA-60 |
| 文件頁數(shù)： | 26/26頁 |
| 文件大小： | 487K |
| 代理商： | K4T1G044QC-ZCLE6 |
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DDR2 SDRAM
K4T1G044QC
K4T1G084QC
Rev. 1.1 June 2007
9 of 26
1Gb Addressing
* Reference information: The following tables are address mapping information for other densities.
256Mb
512Mb
2Gb
4Gb
Configuration
256Mb x4
128Mb x 8
64Mb x16
# of Bank
8
Bank Address
BA0 ~ BA2
Auto precharge
A10/AP
Row Address
A0 ~ A13
A0 ~ A12
Column Address
A0 ~ A9,A11
A0 ~ A9
Configuration
64Mb x4
32Mb x 8
16Mb x16
# of Bank
4
Bank Address
BA0,BA1
Auto precharge
A10/AP
Row Address
A0 ~ A12
Column Address
A0 ~ A9,A11
A0 ~ A9
A0 ~ A8
Configuration
128Mb x4
64Mb x 8
32Mb x16
# of Bank
4
Bank Address
BA0,BA1
Auto precharge
A10/AP
Row Address
A0 ~ A13
A0 ~ A12
Column Address
A0 ~ A9,A11
A0 ~ A9
Configuration
512Mb x4
256Mb x 8
128Mb x16
# of Bank
8
Bank Address
BA0 ~ BA2
Auto precharge
A10/AP
Row Address
A0 ~ A14
A0 ~ A13
Column Address
A0 ~ A9,A11
A0 ~ A9
Configuration
1 Gb x4
512Mb x 8
256Mb x16
# of Bank
8
Bank Address
BA0 ~ BA2
Auto precharge
A10/AP
Row Address
A0 - A15
A0 - A14
Column Address/page size
A0 - A9,A11
A0 - A9
5.0 DDR2 SDRAM Addressing
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PDF描述 |
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| K5A3240YT | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| K6R1004C1C | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4T1G044QE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM |
| K4T1G044QE-HCLE6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM |
| K4T1G044QE-HCLE7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM |
| K4T1G044QE-HCLF7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM |
| K4T1G044QF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb F-die DDR2 SDRAM |
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