參數(shù)資料
型號(hào): K4T1G044QC-ZCLE6
元件分類: DRAM
英文描述: 256M X 4 DDR DRAM, 0.45 ns, PBGA60
封裝: ROHS COMPLIANT, FBGA-60
文件頁數(shù): 11/26頁
文件大小: 487K
代理商: K4T1G044QC-ZCLE6
DDR2 SDRAM
K4T1G044QC
K4T1G084QC
Rev. 1.1 June 2007
19 of 26
Parameter
Symbol
DDR2-800
DDR2-667
DDR2-533
DDR2-400
Units Notes
min
max
min
max
min
max
min
max
Exit active power down to read command
tXARD
2
x
2
x
2
x
2
x
tCK
9
Exit active power down to read command
(slow exit, lower power)
tXARDS
8 - AL
7 - AL
6 - AL
tCK
9, 10
CKE minimum pulse width
(high and low pulse width)
tCKE
3
33
tCK
36
ODT turn-on delay
tAOND
222
22
tCK
ODT turn-on
tAON
tAC(min)
tAC(max)
+0.7
tAC(min)
tAC(max)
+0.7
tAC(min)
tAC(max)
+1
tAC(min)
tAC(max)
+1
ns
13, 25
ODT turn-on(Power-Down mode)
tAONPD
tAC(min)
+2
2tCK +
tAC(max)
+1
tAC(min)
+2
2tCK+tAC
(max)+1
tAC(min)
+2
2tCK+tAC
(max)+1
tAC(min)
+2
2tCK+tAC
(max)+1
ns
ODT turn-off delay
tAOFD
2.5
tCK
ODT turn-off
tAOF
tAC(min)
tAC(max)
+ 0.6
tAC(min)
tAC(max)
+ 0.6
tAC(min)
tAC(max)+
0.6
tAC(min)
tAC(max)+
0.6
ns
26
ODT turn-off (Power-Down mode)
tAOFPD
tAC(min)
+2
2.5tCK+t
AC(max)
+1
tAC(min)
+2
2.5tCK+t
AC(max)
+1
tAC(min)
+2
2.5tCK+
tAC(max)
+1
tAC(min)
+2
2.5tCK+
tAC(max)
+1
ns
ODT to power down entry latency
tANPD
3
tCK
ODT power down exit latency
tAXPD
8
tCK
OCD drive mode output delay
tOIT
0
12
0
12
0
12
0
12
ns
Minimum time clocks remains ON after CKE asyn-
chronously drops LOW
tDelay
tIS+tCK
+tIH
tIS+tCK
+tIH
tIS+tCK
+tIH
tIS+tCK
+tIH
ns
24
相關(guān)PDF資料
PDF描述
K4T56163QI-ZLD50 16M X 16 SYNCHRONOUS DRAM, 0.5 ns, PBGA84
K5A3240YT Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K6R1004C1C 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1C-I 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1C-I10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4T1G044QE 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM
K4T1G044QE-HCLE6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM
K4T1G044QE-HCLE7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM
K4T1G044QE-HCLF7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM
K4T1G044QF 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb F-die DDR2 SDRAM