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參數(shù)資料
| 型號： | IRF6691 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET plus Schottky Diode |
| 中文描述： | HEXFET功率MOSFET的加肖特基二極管 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 228K |
| 代理商： | IRF6691 |
10
www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
11/04
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.72mH,
R
G
= 25
, I
AS
= 26A.
Pulse width
≤
400μs; duty cycle
≤
2%.
Surface mounted on 1 in. square Cu board.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermal couple mounted to top (Drain) of
part.
R
θ
is measured at
T
J
of approximately 90°C.
DirectFET
Part Marking
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6691TR1 | 功能描述:MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6691TR1PBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6691TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6691TRPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6691TRPBF-EL | 制造商:International Rectifier 功能描述: |
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