參數(shù)資料
型號: HYS64T16000HDL-2.5-A
廠商: INFINEON TECHNOLOGIES AG
元件分類: DRAM
英文描述: 16M X 64 DDR DRAM MODULE, 0.4 ns, DMA200
封裝: GREEN, SODIMM-200
文件頁數(shù): 42/46頁
文件大?。?/td> 833K
代理商: HYS64T16000HDL-2.5-A
Data Sheet
2
Rev. 1.1, 2005-06
02182004-HWZ1-64OM
200-Pin Small-Outline-DDR2-SDRAM Modules
SO-DIMM
HYS64T16000HDL–[2.5/3.7/5]–A
HYS64T32020HDL–2.5–A
HYS64T64021HDL–2.5–A
1Overview
This chapter gives an overview of the 200-Pin Small-Outline-DDR2-SDRAM Modules product family and
describes its main characteristics.
1.1
Features
200-pin PC2-6400, PC2-4200 and PC2-3200
DDR2 SDRAM memory modules for use as main
memory when installed in systems such as mobile
personal computers.
16M
× 64, 32M × 64, 64Mx64 module organization,
and 16M
× 16, 32M × 8 chip organization
128, 256 and 512 MByte modules built with 256-
Mbit DDR2 SDRAMs in P-TFBGA-60 and P-
TFBGA-84 chipsize packages
Standard DDR2 Synchronous DRAMs (DDR2
SDRAM) with a single + 1.8 V (± 0.1 V) power
supply
All speed grades faster than DDR2-400 comply with
DDR2-400 timing specifications
Programmable CAS Latencies (3, 4, 5 and 6), Burst
Length (8 & 4) and Burst Type
Auto Refresh (CBR) and Self Refresh
All inputs and outputs SSTL_18 compatible
Off-Chip Driver Impedance Adjustment (OCD) and
On-Die Termination (ODT)
Serial Presence Detect with E2PROM
SO-DIMM Dimensions (nominal) :
30 mm high, 133.35 mm wide
Based on standard reference layouts Raw Card “A”,
“C“ and “F”
RoHS compliant products1)
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic
equipment as defined in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January
2003. These substances include mercury, lead, cadmium, hexavalent chromium, polybrominated biphenyls and
polybrominated biphenyl ethers.
Table 1
Performance for DDR2-800
Product Type Speed Code
–2.5
Unit
Speed Grade
PC2–6400 6–6–6
max. Clock Frequency
@CL6
f
CK6
400
@CL5
f
CK5
333
MHz
@CL4
f
CK4
333
MHz
@CL3
f
CK3
200
MHz
min. RAS-CAS-Delay
t
RCD
15
ns
min. Row Precharge Time
t
RP
15
ns
min. Row Active Time
t
RAS
45
ns
min. Row Cycle Time
t
RC
60
ns
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