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參數(shù)資料
| 型號： | HM5212805F |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 128M LVTTL interface SDRAM(128M LVTTL 接口同步DRAM) |
| 中文描述： | 128M的LVTTL接口的SDRAM（128M的LVTTL接口同步的DRAM） |
| 文件頁數(shù)： | 27/63頁 |
| 文件大小： | 858K |
| 代理商： | HM5212805F |
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HM5212165F/HM5212805F-75/A60/B60
27
Write command to Write command interval:
1. Same bank, same ROW address:
When another write command is executed at the same ROW address
of the same bank as the preceding write command, the second write can be performed after an interval of no
less than 1 clock. In the case of burst writes, the second write command has priority.
WRITE to WRITE Command Interval
(same ROW address in same bank)
CLK
Command
Din
in B3
Address
in B1
in B2
BS
ACTV
Row
Column A
WRIT
WRIT
Column B
in A0
in B0
Bank0
Active
Column =A
Write
Column =B
Write
Burst Write Mode
Burst Length = 4
Bank 0
2. Same bank, different ROW address:
When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two write commands with a precharge command and a
bank-active command.
3. Different bank:
When the bank changes, the second write can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. In the case of burst write, the second
write command has priority.
WRITE to WRITE Command Interval
(different bank)
CLK
Command
Din
in B3
Address
in B1
in B2
BS
ACTV
Row 0
Row 1
ACTV
WRIT
Column A
in A0
in B0
Bank0
Active
Bank3
Active
Bank0
Write
Bank3
Write
WRIT
Column B
Burst Write Mode
Burst Length = 4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM5212165F | 128M LVTTL interface SDRAM(128M LVTTL 接口同步DRAM) |
| HM5225165BTT-75 | 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM |
| HM5225805BLTT-A6 | 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM |
| HM5225405B-B6 | 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM |
| HM5225405BLTT-75 | POT 20K OHM 9MM HORZ NO BUSHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM5212805FLTD-75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword × 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM |
| HM5212805FLTD-A60 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword X 16-bit X 4-bank/4-Mword X 8-bit X 4-bank PC/133, PC/100 SDRAM |
| HM5212805FLTD-B60 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword X 16-bit X 4-bank/4-Mword X 8-bit X 4-bank PC/133, PC/100 SDRAM |
| HM5212805FTD-75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword × 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM |
| HM5212805FTD-A60 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword X 16-bit X 4-bank/4-Mword X 8-bit X 4-bank PC/133, PC/100 SDRAM |
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