參數(shù)資料
型號: HM51S4265DTT-6
元件分類: DRAM
英文描述: 256K X 16 EDO DRAM, 60 ns, PDSO40
封裝: 0.400 INCH, PLASTIC, MO-133BA, TSOP2-44/40
文件頁數(shù): 3/33頁
文件大?。?/td> 331K
代理商: HM51S4265DTT-6
HM514265D Series, HM51S4265D Series
11
Write Cycle
HM514265D, HM51S4265D
-5
-6/-6R
-7
-8
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Unit Notes
Write command setup time
t
WCS
0
0
0
0
ns
10, 19
Write command hold time
t
WCH
8
10
13
15
ns
19
Write command pulse width t
WP
8
10
10
10
ns
Write command to
RAS
lead time
t
RWL
8
10
13
15
ns
Write command to
CAS
lead time
t
CWL
8
10
13
15
ns
21
Data-in setup time
t
DS
0
0
0
0
ns
11, 21
Data-in hold time
t
DH
8
10
13
15
ns
11, 21
Read-Modify-Write Cycle
HM514265D, HM51S4265D
-5
-6/-6R
-7
-8
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Unit Notes
Read-modify-write cycle
time
t
RWC
109
133
159
183
ns
RAS to WE delay time
t
RWD
65
77
90
102
ns
10
CAS to WE delay time
t
CWD
30
32
38
42
ns
10
Column address to
WE
delay time
t
AWD
42
47
55
62
ns
10
OE hold time from WE
t
OEH
13
15
18
20
ns
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