參數(shù)資料
型號: GS8170S18
廠商: GSI TECHNOLOGY
英文描述: 16Mb(1M x 18Bit)Synchronous SRAM(16M位(1M x 18位)同步靜態(tài)RAM)
中文描述: 16Mb的(100萬x 18位)同步SRAM(1,600位(100萬× 18位)同步靜態(tài)內(nèi)存)
文件頁數(shù): 9/38頁
文件大?。?/td> 934K
代理商: GS8170S18
Rev: 1.01 11/2000
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
9/38
2000, Giga Semiconductor, Inc.
A
Advanced Information
GS8170S18/36/72B-333/300/275/250
Read Operations
Flow Through Read
A Flow Through Read cycle sends data to the output drivers immediately after the address and read command are captured in the
input registers. The main clock input, CK, need not ever fire again for data to be driven out. Normally, Flow Through mode is
employed in situations where the latency of the RAM (the Flow Through tKHQV) is appreciably shorter than the bus frequency of
the application.
Read
Deselect
Write
Read
Hi-Z
Read
D
Access
Key
E
F
CK
Address
A
XX
/E
1
/W
DQ
C
QE
DC
QA
QD
Sigma Early Write with Flow Through Read
F
/E
1
QE
DB
/W
DQ
QA
DD
QC
Read
D
E
CK
Address
A
B
Access
Read
Write
Read
Key
Hi-Z
C
Write
Sigma Late Write with Flow Through Read
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