參數(shù)資料
型號: GS8170S18
廠商: GSI TECHNOLOGY
英文描述: 16Mb(1M x 18Bit)Synchronous SRAM(16M位(1M x 18位)同步靜態(tài)RAM)
中文描述: 16Mb的(100萬x 18位)同步SRAM(1,600位(100萬× 18位)同步靜態(tài)內(nèi)存)
文件頁數(shù): 26/38頁
文件大?。?/td> 934K
代理商: GS8170S18
Rev: 1.01 11/2000
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
26/38
2000, Giga Semiconductor, Inc.
A
Advanced Information
GS8170S18/36/72B-333/300/275/250
ADV Valid to Clock High
tadvVKH
0.6
0.7
0.7
0.8
ns
Clock High to ADV Don’t Care
tKHadvX
0.4
0.4
0.5
0.5
ns
G to Output Valid
tGLQV
3.0
3.3
3.6
4.0
ns
G to output in Low-Z
tGLQX1
0.5
0.5
0.5
0.5
ns
1
G to output in High-Z
tGHQZ
3.0
3.3
3.6
4.0
ns
1
Parameter
Symbol
-333
-300
-275
-250
Unit Notes
Min Max Min Max Min Max Min Max
Notes:
1.
2.
3.
4.
Measured at 100 mV from steady state. Not 100% tested.
Guaranteed by design. Not 100% tested.
For any specific temperature and voltage tKHCZ < tKHCX1.
Tested using AC Test Load B
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