參數(shù)資料
型號(hào): GS8170S18
廠商: GSI TECHNOLOGY
英文描述: 16Mb(1M x 18Bit)Synchronous SRAM(16M位(1M x 18位)同步靜態(tài)RAM)
中文描述: 16Mb的(100萬x 18位)同步SRAM(1,600位(100萬× 18位)同步靜態(tài)內(nèi)存)
文件頁數(shù): 14/38頁
文件大?。?/td> 934K
代理商: GS8170S18
Rev: 1.01 11/2000
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
14/38
2000, Giga Semiconductor, Inc.
A
Advanced Information
GS8170S18/36/72B-333/300/275/250
Sigma Pipelined Burst Reads with Counter Wrap-around
Internal
Address
A2
A3
A0
A1
A2
CQ
DQ
QA2
QA3
QA1
Counter Wraps
/E
1
ADV
A2
XX
XX
QA0
/W
Continue
CK
XX
XX
Read
Continue
Continue
Continue
External
Address
D1
D2
XX
Counter Wraps
XX
A2
CQ
Continue
/E
1
ADV
DQ
D2
Continue
CK
Address
A2
XX
XX
XX
Continue
Continue
Write
D0
/W
A1
A2
A3
A0
D3
Internal
Addres
Sigma Late Write SRAM Burst Writes with Counter Wrap-around
相關(guān)PDF資料
PDF描述
GS8170S72 16Mb(256K x 72Bit)Synchronous SRAM(16M位(256K x 72位)同步靜態(tài)RAM)
GS8180D09 2Mb x 9Bit Separate I/O Sigma DDR SRAM(2M x 9位獨(dú)立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM)
GS8180D18 1Mb x 18Bit Separate I/O Sigma DDR SRAM(1M x 18位獨(dú)立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM)
GS8180S36 512K x 36Bit Separate I/O Sigma DDR SRAM(512K x 36位獨(dú)立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM)
GS8180S18 1Mb x 18Bit Separate I/O Sigma DDR SRAM(1M x 18位獨(dú)立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM)
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