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參數(shù)資料
| 型號(hào)： | GS8170S18 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（1M x 18Bit）Synchronous SRAM(16M位（1M x 18位）同步靜態(tài)RAM) |
| 中文描述： | 16Mb的（100萬x 18位）同步SRAM（1,600位（100萬× 18位）同步靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 31/38頁 |
| 文件大?。?/td> | 934K |
| 代理商： | GS8170S18 |
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Rev: 1.01 11/2000
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
31/38
2000, Giga Semiconductor, Inc.
A
Advanced Information
GS8170S18/36/72B-333/300/275/250
Tap Controller Instruction Set
Overview
There are two classes of instructions defined in the Standard 1149.1-1990—the standard (Public) instructions, and device specific
(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be
implemented in prescribed ways. Although the TAP controller in this device follows the 1149.1 conventions, it is not 1194.1-
compliant because some of the mandatory instructions are uniquely implemented. The TAP on this device may be used to monitor
all input and I/O pads, but cannot be used to load address, data or control signals into the RAM or to preload the I/O buffers.This
device will not perform INTEST or the preload portion of the SAMPLE/PRELOAD command.
When the TAP controller is placed in Capture-IR state, the two least significant bits of the instruction register are loaded with 01.
When the controller is moved to the Shift-IR state, the Instruction Register is placed between TDI and TDO. In this state the
desired instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all
instructions, the TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP
instruction set for this device is listed in the following table.
JTAG Tap Controller State Diagram
Instruction Descriptions
BYPASS
When the BYPASS instruction is loaded in the Instruction Register, the Bypass Register is placed between TDI and TDO. This occurs when
the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices
Select DR
Capture DR
0
Shift DR
Exit1 DR
Pause DR
Exit2 DR
Update DR
1
Select IR
Capture IR
0
Shift IR
Exit1 IR
Pause IR
Exit2 IR
Update IR
1
Test Logic Reset
Run Test Idle
0
1
0
1
1
0
1
1
1
0
0
1
1
0
0
0
0
1
1
0
0
0
0
0
1
1
1
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8170S72 | 16Mb（256K x 72Bit）Synchronous SRAM(16M位（256K x 72位）同步靜態(tài)RAM) |
| GS8180D09 | 2Mb x 9Bit Separate I/O Sigma DDR SRAM(2M x 9位獨(dú)立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM) |
| GS8180D18 | 1Mb x 18Bit Separate I/O Sigma DDR SRAM(1M x 18位獨(dú)立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM) |
| GS8180S36 | 512K x 36Bit Separate I/O Sigma DDR SRAM(512K x 36位獨(dú)立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM) |
| GS8180S18 | 1Mb x 18Bit Separate I/O Sigma DDR SRAM(1M x 18位獨(dú)立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8171DW36AC-300I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.8NS 209FBGA - Trays |
| GS8171DW36AC-350 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.7NS 209FBGA - Trays |
| GS8171DW36AC-350I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.7NS 209BGA - Trays |
| GS8171DW36AGC-250 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 2.1NS 209FBGA - Trays |
| GS8171DW36AGC-300 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.8NS 209FBGA - Trays |
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