參數(shù)資料
型號: W9425G6EH-5I
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 16M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: 0.400 INCH, ROHS COMPLIANT, TSOP2-66
文件頁數(shù): 10/54頁
文件大?。?/td> 0K
代理商: W9425G6EH-5I
W9425G6EH
Publication Release Date:Dec. 03, 2008
- 18 -
Revision A08
8. OPERATION MODE
The following table shows the operation commands.
8.1 Simplified Truth Table
SYM.
COMMAND
DEVICE
STATE
CKEn-1 CKEn
DM
(4)
BA0,
BA1
A10
A12,
A11,
A9-A0
CS
RAS
CAS
WE
ACT
Bank Active
Idle
(3)
H
X
V
L
H
PRE
Bank Precharge
Any
(3)
H
X
V
L
X
L
H
L
PREA
Precharge All
Any
H
X
H
X
L
H
L
WRIT
Write
Active
(3)
H
X
V
L
V
L
H
L
WRITA
Write with Auto-
precharge
Active
(3)
H
X
V
H
V
L
H
L
READ
Read
Active
(3)
H
X
V
L
V
L
H
L
H
READA
Read with Auto-
precharge
Active
(3)
H
X
V
H
V
L
H
L
H
MRS
Mode Register Set
Idle
H
X
L, L
C
L
EMRS
Extended Mode
Register Set
Idle
H
X
H, L
V
L
NOP
No Operation
Any
H
X
L
H
BST
Burst Read Stop
Active
H
X
L
H
L
DSL
Device Deselect
Any
H
X
H
X
AREF
Auto Refresh
Idle
H
X
L
H
SELF
Self Refresh Entry
Idle
H
L
X
L
H
X
SELEX
Self Refresh Exit
Idle (Self
Refresh)
L
H
X
L
H
X
H
X
PD
Power Down
Mode Entry
Idle/
Active
(5)
H
L
X
L
H
X
H
X
PDEX
Power Down
Mode Exit
Any (Power
Down)
L
H
X
L
H
X
WDE
Data Write Enable
Active
H
X
L
X
WDD
Data Write Disable
Active
H
X
H
X
Notes
:
1. V = Valid X = Don’t Care L = Low level H = High level
2. CKE
n signal is input level when commands are issued.
CKE
n-1 signal is input level one clock cycle before the commands are issued.
3. These are state designated by the BA0, BA1 signals.
4. LDM, UDM (W9425G6EH).
5. Power Down Mode can not entry in the burst cycle.
相關(guān)PDF資料
PDF描述
W7NCF02GH11IS8EG 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC
WS512K32-55G2UMA 512K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQFP68
WS512K32-45G2UM 512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CQFP68
WS512K32L-45G4TM 512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CQFP68
WS512K32N-35G4TCA 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W9425G6JB-5 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256Mb DDRI DRAM ,200MHZ, BGA
W9425G6JB-5 TR 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ
W9425G6JB-5I 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W9425G6JB-5I TR 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ, IN
W9425G6JH 制造商:WINBOND 制造商全稱:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM