- 您現在的位置：買賣IC網 > PDF目錄231493 > W25X40-VSSI (WINBOND ELECTRONICS CORP) 4M X 1 FLASH 2.7V PROM, PDSO8 PDF資料下載
參數資料
| 型號： | W25X40-VSSI |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 4M X 1 FLASH 2.7V PROM, PDSO8 |
| 封裝： | 0.208 INCH, PLASTIC, SOIC-8 |
| 文件頁數： | 20/42頁 |
| 文件大?。?/td> | 1198K |
| 代理商： | W25X40-VSSI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁當前第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁
W25X10, W25X20, W25X40 AND W25X80
Publication Release Date: February 13, 2006
- 27 -
Revision E
9.2.15 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, obtain the devices electronic identification (ID) number
or do both.
When used only to release the device from the power-down state, the instruction is issued by driving
the /CS pin low, shifting the instruction code “ABh” and driving /CS high as shown in figure 16. After
the time duration of tRES1 (See AC Characteristics) the device will resume normal operation and other
instructions will be accepted. The /CS pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated
by driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The
Device ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as
shown in figure 17. The Device ID values for the W25X10, W25X20, W25X40 AND W25X80 are listed
in Manufacturer and Device Identification table. The Device ID can be read continuously. The
instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction
is the same as previously described, and shown in figure 15, except that after /CS is driven high it
must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the
device will resume normal operation and other instructions will be accepted.
If the Release from Power-down / Device ID instruction is issued while an Erase, Program or Write
cycle is in process (when BUSY equals 1) the instruction is ignored and will not have any effects on
the current cycle
Figure 16. Release Power-down Instruction Sequence
相關PDF資料 |
PDF描述 |
|---|---|
| WF2M16W-90FLI5A | 2M X 16 FLASH 5V PROM MODULE, 90 ns, CDFP44 |
| W3EG72129S335JD3SG | 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 |
| W3EG72129S202JD3SG | 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| W3EG64128S202JD3 | 128M X 64 DDR DRAM MODULE, DMA184 |
| WE512K8300CIA | 512K X 8 EEPROM 5V MODULE, 300 ns, CDIP32 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W25X40VSSIG | 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| W25X40VSSIG T&R | 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| W25X40VSSIZ | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X40VZPC | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X40VZPCG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
發(fā)布緊急采購，3分鐘左右您將得到回復。