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參數(shù)資料
| 型號： | W25X40-VSSI |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 4M X 1 FLASH 2.7V PROM, PDSO8 |
| 封裝： | 0.208 INCH, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 18/42頁 |
| 文件大小： | 1198K |
| 代理商： | W25X40-VSSI |
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W25X10, W25X20, W25X40 AND W25X80
Publication Release Date: February 13, 2006
- 25 -
Revision E
9.2.13 Chip Erase (C7h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A
Write Enable instruction must be executed before the device will accept the Chip Erase Instruction
(Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and
shifting the instruction code “C7h”. The Chip Erase instruction sequence is shown in figure 14.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip
Erase instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction
will commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in
progress, the Read Status Register instruction may still be accessed to check the status of the BUSY
bit. The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is
ready to accept other instructions again. After the Chip Erase cycle has finished the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0. The Chip Erase instruction will not be executed
if any page is protected by the Block Protect (BP2, BP1, and BP0) bits (see Status Register Memory
Protection table).
Figure 14. Chip Erase Instruction Sequence Diagram
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25X40VSSIG | 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| W25X40VSSIG T&R | 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| W25X40VSSIZ | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X40VZPC | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X40VZPCG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
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