參數(shù)資料
型號(hào): TTRN0110G
廠商: Lineage Power
英文描述: 10 Gbits/s Clock Synthesizer, 16:1 Data Multiplexer(10 G位/秒時(shí)鐘合成器,16:1數(shù)據(jù)多路復(fù)用器)
中文描述: 10 Gb /秒時(shí)鐘合成器,16:1數(shù)據(jù)復(fù)用器(10政位/秒時(shí)鐘合成器,16:1數(shù)據(jù)多路復(fù)用器)
文件頁(yè)數(shù): 19/30頁(yè)
文件大小: 633K
代理商: TTRN0110G
Advance Data Sheet
August 2000
TTRN0110G
10 Gbits/s Clock Synthesizer, 16:1 Data Multiplexer
19
Lucent Technologies Inc.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are
absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in
excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for
extended periods can adversely affect device reliability.
Handling Precautions
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid
exposure to electrostatic discharge (ESD) during handling and mounting. Lucent employs a human-body model
(HBM) and charged-device model (CDM) for ESD-susceptibility testing and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used in the defined model. No industrywide standard
has been adopted for the CDM. However, a standard HBM (resistance = 1500
, capacitance = 100 pF) is widely
used and, therefore, can be used for comparison purposes:
Operating Conditions
Table 9. Recommended Operating Conditions
Parameter
Min
–40
Max
125
Unit
V
°C
V
Power Supply Voltage (V
CC
)
Storage Temperature
Pin Voltage
GND – 0.5
V
CC
+ 0.5
Device
TTRN0110G
Voltage
TBD
Parameter
Symbol
Min
3.135
Typ
3.3
Max
3.465
Unit
V
V
Power Supply (dc voltage)
Ground
Input Voltage:
Low
High
Temperature:
Ambient
Power Dissipation:
D10G Active, CK10G Disabled,
LBD Disabled
Power Dissipation:
D10G Active, CK10G Active,
LBD Disabled
Power Dissipation:
D10G Active, CK10G Active,
LBD Active
V
IL
V
IH
See Table 13,
Table 14.
See Table 13,
Table 14.
See Table 13,
Table 14.
V
V
P
D
–40
1.2
85
TBD
°C
W
P
D
1.7
TBD
W
P
D
1.9
TBD
W
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