參數(shù)資料
型號(hào)： SI4800
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁(yè)數(shù)： 12/13頁(yè)
文件大?。?/td> 254K
代理商： SI4800
Philips Semiconductors
Si4800
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 13 July 2001
12 of 13
9397 750 08412
Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors - a worldwide company
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Philips Semiconductors,
Marketing Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
Internet:
http://www.semiconductors.philips.com
(SCA72)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4800,518 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4800BDY 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8
SI4800BDY-T1 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
SI4800BDY-T1-E3 功能描述:MOSFET 30V 9A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4800BDY-T1-GE3 功能描述:MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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